Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide

E W Perkins; C Bonet; S P Tear

doi:10.1103/PhysRevB.72.195406

Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide

E W Perkins, C Bonet, S P Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7x7 and 2x1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.

Original language	English
Article number	195406
Pages (from-to)	-
Number of pages	5
Journal	Physical Review B
Volume	72
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.72.195406
Publication status	Published - Nov 2005

Keywords

SCANNING-TUNNELING-MICROSCOPY
ENERGY ION-SCATTERING
DYSPROSIUM GERMANIDE
SI(111)
REVERSAL
SURFACE
ERSI2
SI

Access to Document

10.1103/PhysRevB.72.195406

http://dx.doi.org/10.1103/PhysRevB.72.195406

Cite this

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title = "Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide",

abstract = "The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7x7 and 2x1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.",

keywords = "SCANNING-TUNNELING-MICROSCOPY, ENERGY ION-SCATTERING, DYSPROSIUM GERMANIDE, SI(111), REVERSAL, SURFACE, ERSI2, SI",

author = "Perkins, {E W} and C Bonet and Tear, {S P}",

year = "2005",

month = nov,

doi = "10.1103/PhysRevB.72.195406",

language = "English",

volume = "72",

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journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

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AU - Bonet, C

AU - Tear, S P

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N2 - The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7x7 and 2x1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.

AB - The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7x7 and 2x1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.

KW - SCANNING-TUNNELING-MICROSCOPY

KW - ENERGY ION-SCATTERING

KW - DYSPROSIUM GERMANIDE

KW - SI(111)

KW - REVERSAL

KW - SURFACE

KW - ERSI2

KW - SI

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DO - 10.1103/PhysRevB.72.195406

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JO - Physical Review B

JF - Physical Review B

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