Silicon photonic crystal thermal emitter at near-infrared wavelengths

TY - JOUR

T1 - Silicon photonic crystal thermal emitter at near-infrared wavelengths

AU - O'Regan, Bryan J.

AU - Wang, Yue

AU - Krauss, Thomas F.

PY - 2015/8/21

Y1 - 2015/8/21

N2 - Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (‰1.5 €‰ 1/4m) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 €‰nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ‰1100 €‰K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

AB - Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (‰1.5 €‰ 1/4m) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 €‰nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ‰1100 €‰K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.

UR - http://www.scopus.com/inward/record.url?scp=84939826143&partnerID=8YFLogxK

U2 - 10.1038/srep13415

DO - 10.1038/srep13415

M3 - Article

AN - SCOPUS:84939826143

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 13415

ER -