Silicon spin diffusion transistor: materials, physics and device characteristics

CL Dennis; CV Tiusan; JF Gregg; GJ Ensell; SM Thompson

doi:10.1049/ip-cds:20050008

Silicon spin diffusion transistor: materials, physics and device characteristics

CL Dennis^*, CV Tiusan, JF Gregg, GJ Ensell, SM Thompson

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The realisatlon that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.

Original language	English
Pages (from-to)	340-354
Number of pages	15
Journal	Iee proceedings-Circuits devices and systems
Volume	152
Issue number	4
DOIs	https://doi.org/10.1049/ip-cds:20050008
Publication status	Published - Aug 2005

Keywords

METAL
INJECTION
SEMICONDUCTOR
TUNNEL TRANSISTOR
VALVE TRANSISTOR
EMISSION
GIANT MAGNETORESISTANCE

Access to Document

10.1049/ip-cds:20050008

Cite this

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title = "Silicon spin diffusion transistor: materials, physics and device characteristics",

abstract = "The realisatlon that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.",

keywords = "METAL, INJECTION, SEMICONDUCTOR, TUNNEL TRANSISTOR, VALVE TRANSISTOR, EMISSION, GIANT MAGNETORESISTANCE",

author = "CL Dennis and CV Tiusan and JF Gregg and GJ Ensell and SM Thompson",

year = "2005",

month = aug,

doi = "10.1049/ip-cds:20050008",

language = "English",

volume = "152",

pages = "340--354",

journal = "Iee proceedings-Circuits devices and systems",

issn = "1350-2409",

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TY - JOUR

T1 - Silicon spin diffusion transistor

T2 - materials, physics and device characteristics

AU - Dennis, CL

AU - Tiusan, CV

AU - Gregg, JF

AU - Ensell, GJ

AU - Thompson, SM

PY - 2005/8

Y1 - 2005/8

N2 - The realisatlon that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.

AB - The realisatlon that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.

KW - METAL

KW - INJECTION

KW - SEMICONDUCTOR

KW - TUNNEL TRANSISTOR

KW - VALVE TRANSISTOR

KW - EMISSION

KW - GIANT MAGNETORESISTANCE

U2 - 10.1049/ip-cds:20050008

DO - 10.1049/ip-cds:20050008

M3 - Article

SN - 1350-2409

VL - 152

SP - 340

EP - 354

JO - Iee proceedings-Circuits devices and systems

JF - Iee proceedings-Circuits devices and systems

IS - 4

ER -