Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet

Zongxia Guo; Junlin Wang; Gregory Malinowski; Boyu Zhang; Wei Zhang; Hangtian Wang; Chen Lyu; Yi Peng; Pierre Vallobra; Yong Xu; Yongbing Xu; Sarah Jenkins; Roy W. Chantrell; Richard F.L. Evans; Stéphane Mangin; Weisheng Zhao; Michel Hehn

doi:10.1002/adma.202311643

Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet

Zongxia Guo, Junlin Wang, Gregory Malinowski, Boyu Zhang^*, Wei Zhang, Hangtian Wang, Chen Lyu, Yi Peng, Pierre Vallobra, Yong Xu, Yongbing Xu, Sarah Jenkins, Roy W. Chantrell, Richard F.L. Evans, Stéphane Mangin, Weisheng Zhao^*, Michel Hehn^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (H_e) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of H_e) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

Original language	English
Article number	2311643
Number of pages	7
Journal	Advanced Materials
Volume	36
Issue number	21
Early online date	3 Mar 2024
DOIs	https://doi.org/10.1002/adma.202311643
Publication status	Published - 23 May 2024

Bibliographical note

Funding Information:
The authors gratefully acknowledge the National Key Research and Development Program of China (grant no. 2022YFB4400200), the National Natural Science Foundation of China (grant nos. 12104031, 12104030, 61627813, 12241403, 12304136), the Program of Introducing Talents of Discipline to Universities (grant no. B16001), the Beijing Municipal Science and Technology Project (grant no. Z201100004220002), the China Postdoctoral Science Foundation (grant no. 2022M710320) and the China Scholarship Council, the Guangdong Basic and Applied Basic Research Foundation (grant nos. 2022A1515110863, 2023A1515010837). This work was supported by the ANR‐15‐CE24‐0009 UMAMI and the ANR‐20‐CE09‐0013, by the Institute Carnot ICEEL for the project “Optic‐switch” and Matelas, by the Région Grand Est, by the Metropole Grand Nancy, by the impact project LUE‐N4S, part of the French PIA project “Lorraine Université d'Excellence,” reference ANR‐15‐IDEX‐04‐LUE, and by the “FEDERFSE Lorraine et Massif Vosges 2014–2020,” a European Union Program. The atomistic simulations were performed on the Viking Cluster, a high‐performance compute facility provided by the University of York and ARCHER2, the UK National Supercomputing Service ( https://www.archer2.ac.uk ).

Publisher Copyright:
© 2024 Wiley-VCH GmbH.

Keywords

antiferromagnet
exchange bias
single-shot all-optical switching
spintronics

Access to Document

10.1002/adma.202311643

Cite this

@article{030a622904ca4cffa546afe0e3f18eb3,

title = "Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet",

abstract = "Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.",

keywords = "antiferromagnet, exchange bias, single-shot all-optical switching, spintronics",

author = "Zongxia Guo and Junlin Wang and Gregory Malinowski and Boyu Zhang and Wei Zhang and Hangtian Wang and Chen Lyu and Yi Peng and Pierre Vallobra and Yong Xu and Yongbing Xu and Sarah Jenkins and Chantrell, {Roy W.} and Evans, {Richard F.L.} and St{\'e}phane Mangin and Weisheng Zhao and Michel Hehn",

note = "Funding Information: The authors gratefully acknowledge the National Key Research and Development Program of China (grant no. 2022YFB4400200), the National Natural Science Foundation of China (grant nos. 12104031, 12104030, 61627813, 12241403, 12304136), the Program of Introducing Talents of Discipline to Universities (grant no. B16001), the Beijing Municipal Science and Technology Project (grant no. Z201100004220002), the China Postdoctoral Science Foundation (grant no. 2022M710320) and the China Scholarship Council, the Guangdong Basic and Applied Basic Research Foundation (grant nos. 2022A1515110863, 2023A1515010837). This work was supported by the ANR‐15‐CE24‐0009 UMAMI and the ANR‐20‐CE09‐0013, by the Institute Carnot ICEEL for the project “Optic‐switch” and Matelas, by the R{\'e}gion Grand Est, by the Metropole Grand Nancy, by the impact project LUE‐N4S, part of the French PIA project “Lorraine Universit{\'e} d'Excellence,” reference ANR‐15‐IDEX‐04‐LUE, and by the “FEDERFSE Lorraine et Massif Vosges 2014–2020,” a European Union Program. The atomistic simulations were performed on the Viking Cluster, a high‐performance compute facility provided by the University of York and ARCHER2, the UK National Supercomputing Service ( https://www.archer2.ac.uk ). Publisher Copyright: {\textcopyright} 2024 Wiley-VCH GmbH.",

year = "2024",

month = may,

day = "23",

doi = "10.1002/adma.202311643",

language = "English",

volume = "36",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "21",

}

TY - JOUR

T1 - Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet

AU - Guo, Zongxia

AU - Wang, Junlin

AU - Malinowski, Gregory

AU - Zhang, Boyu

AU - Zhang, Wei

AU - Wang, Hangtian

AU - Lyu, Chen

AU - Peng, Yi

AU - Vallobra, Pierre

AU - Xu, Yong

AU - Xu, Yongbing

AU - Jenkins, Sarah

AU - Chantrell, Roy W.

AU - Evans, Richard F.L.

AU - Mangin, Stéphane

AU - Zhao, Weisheng

AU - Hehn, Michel

N1 - Funding Information: The authors gratefully acknowledge the National Key Research and Development Program of China (grant no. 2022YFB4400200), the National Natural Science Foundation of China (grant nos. 12104031, 12104030, 61627813, 12241403, 12304136), the Program of Introducing Talents of Discipline to Universities (grant no. B16001), the Beijing Municipal Science and Technology Project (grant no. Z201100004220002), the China Postdoctoral Science Foundation (grant no. 2022M710320) and the China Scholarship Council, the Guangdong Basic and Applied Basic Research Foundation (grant nos. 2022A1515110863, 2023A1515010837). This work was supported by the ANR‐15‐CE24‐0009 UMAMI and the ANR‐20‐CE09‐0013, by the Institute Carnot ICEEL for the project “Optic‐switch” and Matelas, by the Région Grand Est, by the Metropole Grand Nancy, by the impact project LUE‐N4S, part of the French PIA project “Lorraine Université d'Excellence,” reference ANR‐15‐IDEX‐04‐LUE, and by the “FEDERFSE Lorraine et Massif Vosges 2014–2020,” a European Union Program. The atomistic simulations were performed on the Viking Cluster, a high‐performance compute facility provided by the University of York and ARCHER2, the UK National Supercomputing Service ( https://www.archer2.ac.uk ). Publisher Copyright: © 2024 Wiley-VCH GmbH.

PY - 2024/5/23

Y1 - 2024/5/23

N2 - Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

AB - Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

KW - antiferromagnet

KW - exchange bias

KW - single-shot all-optical switching

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=85186443078&partnerID=8YFLogxK

U2 - 10.1002/adma.202311643

DO - 10.1002/adma.202311643

M3 - Article

AN - SCOPUS:85186443078

SN - 0935-9648

VL - 36

JO - Advanced Materials

JF - Advanced Materials

IS - 21

M1 - 2311643

ER -

Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Cite this