Spatial hole burning in high-power edge-emitting lasers: A simple analytical model and the effect on laser performance

B. S. Ryvkin, E. A. Avrutin

Research output: Contribution to journalArticlepeer-review

Abstract

A simple analytical model for the longitudinal distributions of photon and carrier densities in edge-emitting semiconductor lasers significantly above threshold is presented. It is shown that under the conditions considered, the shape of these distributions does not depend on pumping current. Good agreement with previous numerical and seminumerical investigations is obtained. It is shown that any direct effect of longitudinal spatial hole burning on the output power is seen only at very low output mirror reflectances and even then is weak, implying that the main effects of longitudinal nonuniformity are indirect ones, through carrier leakage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549155]

Original languageEnglish
Article number043101
Number of pages5
JournalJournal of Applied Physics
Volume109
Issue number4
DOIs
Publication statusPublished - 15 Feb 2011

Keywords

  • SEMICONDUCTOR-LASERS
  • GAIN
  • WAVE
  • EFFICIENCY
  • PHOTON

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