Abstract
A simple analytical model for the longitudinal distributions of photon and carrier densities in edge-emitting semiconductor lasers significantly above threshold is presented. It is shown that under the conditions considered, the shape of these distributions does not depend on pumping current. Good agreement with previous numerical and seminumerical investigations is obtained. It is shown that any direct effect of longitudinal spatial hole burning on the output power is seen only at very low output mirror reflectances and even then is weak, implying that the main effects of longitudinal nonuniformity are indirect ones, through carrier leakage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549155]
Original language | English |
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Article number | 043101 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 4 |
DOIs | |
Publication status | Published - 15 Feb 2011 |
Keywords
- SEMICONDUCTOR-LASERS
- GAIN
- WAVE
- EFFICIENCY
- PHOTON