By the same authors

From the same journal

From the same journal

Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices"

Research output: Contribution to journalSpecial issuepeer-review

Standard

Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices". / Takanashi, Koki; Hirohata, Atsufumi.

In: Materials, 05.01.2018.

Research output: Contribution to journalSpecial issuepeer-review

Harvard

Takanashi, K & Hirohata, A 2018, 'Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices"', Materials. <http://www.mdpi.com/journal/materials/special_issues/spintronic_devices>

APA

Takanashi, K., & Hirohata, A. (2018). Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices". Materials. http://www.mdpi.com/journal/materials/special_issues/spintronic_devices

Vancouver

Takanashi K, Hirohata A. Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices". Materials. 2018 Jan 5.

Author

Takanashi, Koki ; Hirohata, Atsufumi. / Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices". In: Materials. 2018.

Bibtex - Download

@article{2023aa603ac149d0830d6abed55fb3b3,
title = "Special Issue {"}Magnetoresistance Effects and Their Application to Spintronic Devices{"}",
abstract = "Half-metallic ferromagnets have been attracting intensive research in the view of realising an ideal 100% spin-polarised ferromagnet at room temperature. Among such ferromagnets, Heusler alloys have the greatest potential due to their high Curie temperatures, good lattice matching with major substrates, large minority-spin band-gap, and large magnetic moments in general. In this Special Issue, we focus on their magnetoresistance, in both vertical and lateral junctions, formed with a non-magnetic metallic or insulating layer. These junctions can be implemented in a read sensor in a hard disk drive or in a cell of magnetic random access memory to improve their recording density and operation efficiency. We intend to cover from theory and fundamentals of such junctions to their applications.",
author = "Koki Takanashi and Atsufumi Hirohata",
year = "2018",
month = jan,
day = "5",
language = "English",
journal = "Materials",
issn = "1996-1944",
publisher = "American Institute of Physics",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices"

AU - Takanashi, Koki

AU - Hirohata, Atsufumi

PY - 2018/1/5

Y1 - 2018/1/5

N2 - Half-metallic ferromagnets have been attracting intensive research in the view of realising an ideal 100% spin-polarised ferromagnet at room temperature. Among such ferromagnets, Heusler alloys have the greatest potential due to their high Curie temperatures, good lattice matching with major substrates, large minority-spin band-gap, and large magnetic moments in general. In this Special Issue, we focus on their magnetoresistance, in both vertical and lateral junctions, formed with a non-magnetic metallic or insulating layer. These junctions can be implemented in a read sensor in a hard disk drive or in a cell of magnetic random access memory to improve their recording density and operation efficiency. We intend to cover from theory and fundamentals of such junctions to their applications.

AB - Half-metallic ferromagnets have been attracting intensive research in the view of realising an ideal 100% spin-polarised ferromagnet at room temperature. Among such ferromagnets, Heusler alloys have the greatest potential due to their high Curie temperatures, good lattice matching with major substrates, large minority-spin band-gap, and large magnetic moments in general. In this Special Issue, we focus on their magnetoresistance, in both vertical and lateral junctions, formed with a non-magnetic metallic or insulating layer. These junctions can be implemented in a read sensor in a hard disk drive or in a cell of magnetic random access memory to improve their recording density and operation efficiency. We intend to cover from theory and fundamentals of such junctions to their applications.

M3 - Special issue

JO - Materials

JF - Materials

SN - 1996-1944

ER -