Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

A. Hirohata; C.R. Guertler; Y.B. Xu; J.A.C. Bland

doi:10.1109/20.801022

Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

A. Hirohata, C.R. Guertler, Y.B. Xu, J.A.C. Bland

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.

Original language	English
Pages (from-to)	2910-2912
Number of pages	2
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 (Part 1)
DOIs	https://doi.org/10.1109/20.801022
Publication status	Published - Sept 1999

Bibliographical note

© 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Keywords

photon excitation
polarized laser
ferromagnet/semiconductor interface
Schottky barrier

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10.1109/20.801022

xuyb10.pdf

http://dx.doi.org/10.1109/20.801022

Cite this

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title = "Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation",

abstract = "Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.",

keywords = "photon excitation, polarized laser, ferromagnet/semiconductor interface, Schottky barrier",

author = "A. Hirohata and C.R. Guertler and Y.B. Xu and J.A.C. Bland",

note = "{\textcopyright} 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",

year = "1999",

month = sep,

doi = "10.1109/20.801022",

language = "English",

volume = "35",

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journal = "IEEE Transactions on Magnetics",

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TY - JOUR

T1 - Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation

AU - Hirohata, A.

AU - Guertler, C.R.

AU - Xu, Y.B.

AU - Bland, J.A.C.

N1 - © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 1999/9

Y1 - 1999/9

N2 - Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.

AB - Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in 3 nm Au/5 nm Co/GaAs (110) structures. At perpendicular saturation, the bias dependence of the photocurrent was observed to change in the range around 0.7 eV, corresponding to the Schottky barrier height. The photocurrent is observed to change significantly as a function of the magnetization direction with respect to the photon helicity, indicating spin-dependent transport between the semiconductor and the ferromagnetic layer at room temperature.

KW - photon excitation

KW - polarized laser

KW - ferromagnet/semiconductor interface

KW - Schottky barrier

U2 - 10.1109/20.801022

DO - 10.1109/20.801022

M3 - Article

SN - 0018-9464

VL - 35

SP - 2910

EP - 2912

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 (Part 1)

ER -