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Spin-ARPES EUV beamline for ultrafast materials research and development

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Spin-ARPES EUV beamline for ultrafast materials research and development. / Nie, Zhonghui; Turcu, Ion Cristian Edmond; Li, Yao; Zhang, Xiaoqian; He, Liang; Tu, Jian; Ni, Zhiqiang; Xu, Huangfeng; Chen, Yequan; Ruan, Xuezhong; Frassetto, Fabio; Miotti, Paolo; Fabris, Nicola; Poletto, Luca; Wu, Jing; Lu, Qiangsheng; Liu, Chang; Kampen, Thorsten; Zhai, Ya; Liu, Wenqing; Cacho, Cephise; Wang, Xuefeng; Wang, Fengqiu; Shi, Yi; Zhang, Rong; Xu, Yongbing.

In: Applied Sciences (Switzerland), Vol. 9, No. 3, 370, 22.01.2019.

Research output: Contribution to journalArticlepeer-review

Harvard

Nie, Z, Turcu, ICE, Li, Y, Zhang, X, He, L, Tu, J, Ni, Z, Xu, H, Chen, Y, Ruan, X, Frassetto, F, Miotti, P, Fabris, N, Poletto, L, Wu, J, Lu, Q, Liu, C, Kampen, T, Zhai, Y, Liu, W, Cacho, C, Wang, X, Wang, F, Shi, Y, Zhang, R & Xu, Y 2019, 'Spin-ARPES EUV beamline for ultrafast materials research and development', Applied Sciences (Switzerland), vol. 9, no. 3, 370. https://doi.org/10.3390/app9030370

APA

Nie, Z., Turcu, I. C. E., Li, Y., Zhang, X., He, L., Tu, J., Ni, Z., Xu, H., Chen, Y., Ruan, X., Frassetto, F., Miotti, P., Fabris, N., Poletto, L., Wu, J., Lu, Q., Liu, C., Kampen, T., Zhai, Y., ... Xu, Y. (2019). Spin-ARPES EUV beamline for ultrafast materials research and development. Applied Sciences (Switzerland), 9(3), [370]. https://doi.org/10.3390/app9030370

Vancouver

Nie Z, Turcu ICE, Li Y, Zhang X, He L, Tu J et al. Spin-ARPES EUV beamline for ultrafast materials research and development. Applied Sciences (Switzerland). 2019 Jan 22;9(3). 370. https://doi.org/10.3390/app9030370

Author

Nie, Zhonghui ; Turcu, Ion Cristian Edmond ; Li, Yao ; Zhang, Xiaoqian ; He, Liang ; Tu, Jian ; Ni, Zhiqiang ; Xu, Huangfeng ; Chen, Yequan ; Ruan, Xuezhong ; Frassetto, Fabio ; Miotti, Paolo ; Fabris, Nicola ; Poletto, Luca ; Wu, Jing ; Lu, Qiangsheng ; Liu, Chang ; Kampen, Thorsten ; Zhai, Ya ; Liu, Wenqing ; Cacho, Cephise ; Wang, Xuefeng ; Wang, Fengqiu ; Shi, Yi ; Zhang, Rong ; Xu, Yongbing. / Spin-ARPES EUV beamline for ultrafast materials research and development. In: Applied Sciences (Switzerland). 2019 ; Vol. 9, No. 3.

Bibtex - Download

@article{5cd867f4146948e099c2c9407c3bd31a,
title = "Spin-ARPES EUV beamline for ultrafast materials research and development",
abstract = "A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the {"}Ultrafast Spintronic Materials Facility{"}, dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 × 1011 photons/second (2.3 × 108 photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10-100 eV. Ultrafast surface photovoltaic effect with ~650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power.",
keywords = "High-order harmonic generation, Time-resolved ARPES, Ultrafast extreme violet",
author = "Zhonghui Nie and Turcu, {Ion Cristian Edmond} and Yao Li and Xiaoqian Zhang and Liang He and Jian Tu and Zhiqiang Ni and Huangfeng Xu and Yequan Chen and Xuezhong Ruan and Fabio Frassetto and Paolo Miotti and Nicola Fabris and Luca Poletto and Jing Wu and Qiangsheng Lu and Chang Liu and Thorsten Kampen and Ya Zhai and Wenqing Liu and Cephise Cacho and Xuefeng Wang and Fengqiu Wang and Yi Shi and Rong Zhang and Yongbing Xu",
note = "{\textcopyright} 2019 by the authors.",
year = "2019",
month = jan,
day = "22",
doi = "10.3390/app9030370",
language = "English",
volume = "9",
journal = "Applied Sciences",
issn = "2076-3417",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "3",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Spin-ARPES EUV beamline for ultrafast materials research and development

AU - Nie, Zhonghui

AU - Turcu, Ion Cristian Edmond

AU - Li, Yao

AU - Zhang, Xiaoqian

AU - He, Liang

AU - Tu, Jian

AU - Ni, Zhiqiang

AU - Xu, Huangfeng

AU - Chen, Yequan

AU - Ruan, Xuezhong

AU - Frassetto, Fabio

AU - Miotti, Paolo

AU - Fabris, Nicola

AU - Poletto, Luca

AU - Wu, Jing

AU - Lu, Qiangsheng

AU - Liu, Chang

AU - Kampen, Thorsten

AU - Zhai, Ya

AU - Liu, Wenqing

AU - Cacho, Cephise

AU - Wang, Xuefeng

AU - Wang, Fengqiu

AU - Shi, Yi

AU - Zhang, Rong

AU - Xu, Yongbing

N1 - © 2019 by the authors.

PY - 2019/1/22

Y1 - 2019/1/22

N2 - A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the "Ultrafast Spintronic Materials Facility", dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 × 1011 photons/second (2.3 × 108 photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10-100 eV. Ultrafast surface photovoltaic effect with ~650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power.

AB - A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the "Ultrafast Spintronic Materials Facility", dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 × 1011 photons/second (2.3 × 108 photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10-100 eV. Ultrafast surface photovoltaic effect with ~650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power.

KW - High-order harmonic generation

KW - Time-resolved ARPES

KW - Ultrafast extreme violet

UR - http://www.scopus.com/inward/record.url?scp=85060397346&partnerID=8YFLogxK

U2 - 10.3390/app9030370

DO - 10.3390/app9030370

M3 - Article

AN - SCOPUS:85060397346

VL - 9

JO - Applied Sciences

JF - Applied Sciences

SN - 2076-3417

IS - 3

M1 - 370

ER -