Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

Eugene Avrutin; Boris Ryvkin; Juha Tapio Kostamovaara

doi:10.1088/1361-6641/aa92fd

Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

Eugene Avrutin, Boris Ryvkin, Juha Tapio Kostamovaara

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract—An analytical model for internal optical losses at high power in a 1.5 μm
laser diode with strong n-doping in the n-side of the optical confinement layer is
created. The model includes intervalence band absorption by holes supplied by
both current flow and two-photon absorption, as well as the direct two-photon
absorption effect. The resulting losses are compared with those in an identical
structure with a weakly doped waveguide, and shown to be substantially lower,
resulting in a significant improvement in the output power and efficiency in the
structure with a strongly doped waveguide

Original language	English
Article number	125008
Number of pages	9
Journal	Semiconductor science and technology
Volume	32
Issue number	12
DOIs	https://doi.org/10.1088/1361-6641/aa92fd
Publication status	Published - 31 Oct 2017

Bibliographical note

© 2017 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

Keywords

high power lasers
laser efficiency
laser theory
semiconductor lasers

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Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

Abstract

Bibliographical note

Keywords

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