Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

Eugene Avrutin, Boris Ryvkin, Juha Tapio Kostamovaara

Research output: Contribution to journalArticlepeer-review


Abstract—An analytical model for internal optical losses at high power in a 1.5 μm
laser diode with strong n-doping in the n-side of the optical confinement layer is
created. The model includes intervalence band absorption by holes supplied by
both current flow and two-photon absorption, as well as the direct two-photon
absorption effect. The resulting losses are compared with those in an identical
structure with a weakly doped waveguide, and shown to be substantially lower,
resulting in a significant improvement in the output power and efficiency in the
structure with a strongly doped waveguide
Original languageEnglish
Article number125008
Number of pages9
JournalSemiconductor science and technology
Issue number12
Publication statusPublished - 31 Oct 2017

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  • high power lasers
  • laser efficiency
  • laser theory
  • semiconductor lasers

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