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Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

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JournalSemiconductor science and technology
DateAccepted/In press - 12 Oct 2017
DatePublished (current) - 31 Oct 2017
Issue number12
Volume32
Number of pages9
Original languageEnglish

Abstract

Abstract—An analytical model for internal optical losses at high power in a 1.5 μm
laser diode with strong n-doping in the n-side of the optical confinement layer is
created. The model includes intervalence band absorption by holes supplied by
both current flow and two-photon absorption, as well as the direct two-photon
absorption effect. The resulting losses are compared with those in an identical
structure with a weakly doped waveguide, and shown to be substantially lower,
resulting in a significant improvement in the output power and efficiency in the
structure with a strongly doped waveguide

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© 2017 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details

    Research areas

  • high power lasers, laser efficiency, laser theory, semiconductor lasers

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