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Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range
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Publication details
| Journal | Semiconductor science and technology |
|---|---|
| Date | Accepted/In press - 12 Oct 2017 |
| Date | Published (current) - 31 Oct 2017 |
| Issue number | 12 |
| Volume | 32 |
| Number of pages | 9 |
| Original language | English |
Abstract
Abstract—An analytical model for internal optical losses at high power in a 1.5 μm
laser diode with strong n-doping in the n-side of the optical confinement layer is
created. The model includes intervalence band absorption by holes supplied by
both current flow and two-photon absorption, as well as the direct two-photon
absorption effect. The resulting losses are compared with those in an identical
structure with a weakly doped waveguide, and shown to be substantially lower,
resulting in a significant improvement in the output power and efficiency in the
structure with a strongly doped waveguide
laser diode with strong n-doping in the n-side of the optical confinement layer is
created. The model includes intervalence band absorption by holes supplied by
both current flow and two-photon absorption, as well as the direct two-photon
absorption effect. The resulting losses are compared with those in an identical
structure with a weakly doped waveguide, and shown to be substantially lower,
resulting in a significant improvement in the output power and efficiency in the
structure with a strongly doped waveguide
Bibliographical note
© 2017 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
- high power lasers, laser efficiency, laser theory, semiconductor lasers
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