Strongly asymmetric waveguide laser diodes for high brightness picosecond optical pulses generation by gain switching at GHz repetition rates

TY - JOUR

T1 - Strongly asymmetric waveguide laser diodes for high brightness picosecond optical pulses generation by gain switching at GHz repetition rates

AU - Avrutin, E. A.

AU - Ryvkin, B. S.

AU - Kostamovaara, J. T.

AU - Kuksenkov, D. V.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Rate equations analysis, supported by travelling wave simulations, is used to show that a diode laser design with a very low (<1%) confinement factor is optimal for generating streams of high energy optical pulses for nonlinear applications by large-signal modulation with both existing and potentially improved ac current generators. An asymmetric waveguide laser design is proposed to realize this low confinement factor while simultaneously maintaining good beam properties in a single transverse mode. The rate equations model complemented by transport equations is used to quantify the effects of transport in the broad optical confinement layer(s) on the laser dynamics, and it is shown that in the proposed laser construction the detrimental effects of transport are weak.

AB - Rate equations analysis, supported by travelling wave simulations, is used to show that a diode laser design with a very low (<1%) confinement factor is optimal for generating streams of high energy optical pulses for nonlinear applications by large-signal modulation with both existing and potentially improved ac current generators. An asymmetric waveguide laser design is proposed to realize this low confinement factor while simultaneously maintaining good beam properties in a single transverse mode. The rate equations model complemented by transport equations is used to quantify the effects of transport in the broad optical confinement layer(s) on the laser dynamics, and it is shown that in the proposed laser construction the detrimental effects of transport are weak.

KW - gain switching

KW - large signal modulation

KW - semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=84928790749&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/5/055006

DO - 10.1088/0268-1242/30/5/055006

M3 - Article

AN - SCOPUS:84928790749

VL - 30

JO - Semiconductor science and technology

JF - Semiconductor science and technology

SN - 0268-1242

IS - 5

M1 - 055006

ER -