Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching

B. S. Ryvkin; E. A. Avrutin; B. Lanz; J. T. Kostamovaara

doi:10.1109/ICTON.2014.6876415

Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching

B. S. Ryvkin, E. A. Avrutin, B. Lanz, J. T. Kostamovaara

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present theoretical investigation of single-and double-section high power semiconductor lasers with strongly asymmetric waveguides with a very large active layer thickness to optical confinement factor ratio, for generation of picosecond pulses. It is shown that such laser constructions compare favourably with alternative constructions as regards generating high-energy, trail-free pulses in a single transverse mode, with high electric to optical power conversion efficiency. Laser performance and operating characteristics under gain and combined gain/Q-switching operating regimes are analysed and compared. For the case of the combined regime in a double-section laser, experimental observation of high-energy trail-free pulses is reported.

Original language	English
Title of host publication	ICTON 2014 - 16th International Conference on Transparent Optical Networks
Publisher	IEEE Computer Society
ISBN (Electronic)	9781479956012
ISBN (Print)	9781479956005
DOIs	https://doi.org/10.1109/ICTON.2014.6876415
Publication status	Published - 2014
Event	16th International Conference on Transparent Optical Networks, ICTON 2014 - Graz, Austria Duration: 6 Jul 2014 → 10 Jul 2014

Conference

Conference	16th International Conference on Transparent Optical Networks, ICTON 2014
Country/Territory	Austria
City	Graz
Period	6/07/14 → 10/07/14

Keywords

gain switching
nonlinear optics
semiconductor lasers

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10.1109/ICTON.2014.6876415

Cite this

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title = "Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching",

abstract = "We present theoretical investigation of single-and double-section high power semiconductor lasers with strongly asymmetric waveguides with a very large active layer thickness to optical confinement factor ratio, for generation of picosecond pulses. It is shown that such laser constructions compare favourably with alternative constructions as regards generating high-energy, trail-free pulses in a single transverse mode, with high electric to optical power conversion efficiency. Laser performance and operating characteristics under gain and combined gain/Q-switching operating regimes are analysed and compared. For the case of the combined regime in a double-section laser, experimental observation of high-energy trail-free pulses is reported.",

keywords = "gain switching, nonlinear optics, semiconductor lasers",

author = "Ryvkin, {B. S.} and Avrutin, {E. A.} and B. Lanz and Kostamovaara, {J. T.}",

year = "2014",

doi = "10.1109/ICTON.2014.6876415",

language = "English",

isbn = "9781479956005",

booktitle = "ICTON 2014 - 16th International Conference on Transparent Optical Networks",

publisher = "IEEE Computer Society",

address = "United States",

note = "16th International Conference on Transparent Optical Networks, ICTON 2014 ; Conference date: 06-07-2014 Through 10-07-2014",

}

Ryvkin, BS, Avrutin, EA, Lanz, B & Kostamovaara, JT 2014, Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching. in ICTON 2014 - 16th International Conference on Transparent Optical Networks., 6876415, IEEE Computer Society, 16th International Conference on Transparent Optical Networks, ICTON 2014, Graz, Austria, 6/07/14. https://doi.org/10.1109/ICTON.2014.6876415

TY - GEN

T1 - Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching

AU - Ryvkin, B. S.

AU - Avrutin, E. A.

AU - Lanz, B.

AU - Kostamovaara, J. T.

PY - 2014

Y1 - 2014

N2 - We present theoretical investigation of single-and double-section high power semiconductor lasers with strongly asymmetric waveguides with a very large active layer thickness to optical confinement factor ratio, for generation of picosecond pulses. It is shown that such laser constructions compare favourably with alternative constructions as regards generating high-energy, trail-free pulses in a single transverse mode, with high electric to optical power conversion efficiency. Laser performance and operating characteristics under gain and combined gain/Q-switching operating regimes are analysed and compared. For the case of the combined regime in a double-section laser, experimental observation of high-energy trail-free pulses is reported.

AB - We present theoretical investigation of single-and double-section high power semiconductor lasers with strongly asymmetric waveguides with a very large active layer thickness to optical confinement factor ratio, for generation of picosecond pulses. It is shown that such laser constructions compare favourably with alternative constructions as regards generating high-energy, trail-free pulses in a single transverse mode, with high electric to optical power conversion efficiency. Laser performance and operating characteristics under gain and combined gain/Q-switching operating regimes are analysed and compared. For the case of the combined regime in a double-section laser, experimental observation of high-energy trail-free pulses is reported.

KW - gain switching

KW - nonlinear optics

KW - semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=84906748596&partnerID=8YFLogxK

U2 - 10.1109/ICTON.2014.6876415

DO - 10.1109/ICTON.2014.6876415

M3 - Conference contribution

AN - SCOPUS:84906748596

SN - 9781479956005

BT - ICTON 2014 - 16th International Conference on Transparent Optical Networks

PB - IEEE Computer Society

T2 - 16th International Conference on Transparent Optical Networks, ICTON 2014

Y2 - 6 July 2014 through 10 July 2014

ER -

Strongly asymmetric waveguide semiconductor lasers for picosecond pulse generation by gain-and Q-switching

Abstract

Conference

Keywords

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