Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film

Takahiro Ogasawara; Jun-Young Kim; Yasuo Ando; Atsufumi Hirohata

doi:10.1016/j.jmmm.2018.10.035

Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film

Takahiro Ogasawara, Jun-Young Kim, Yasuo Ando, Atsufumi Hirohata

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varying
annealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, high
temperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchange
bias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mn
composition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported Néel temperature of 390 K in the bulk
state, however, further improvements are expected by doping additional transition elements.

Original language	English
Pages (from-to)	7-11
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	473
DOIs	https://doi.org/10.1016/j.jmmm.2018.10.035
Publication status	Published - 9 Oct 2018

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10.1016/j.jmmm.2018.10.035Licence: CC BY-NC-ND

1-s2.0-S0304885318323515-main-1
© 2018 The Authors. Published by Elsevier B.V.
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Cite this

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title = "Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film",

abstract = "Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported N{\'e}el temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.",

author = "Takahiro Ogasawara and Jun-Young Kim and Yasuo Ando and Atsufumi Hirohata",

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T1 - Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film

AU - Ogasawara, Takahiro

AU - Kim, Jun-Young

AU - Ando, Yasuo

AU - Hirohata, Atsufumi

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported Néel temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.

AB - Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported Néel temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.

U2 - 10.1016/j.jmmm.2018.10.035

DO - 10.1016/j.jmmm.2018.10.035

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