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Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film

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Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film. / Ogasawara, Takahiro; Kim, Jun-Young; Ando, Yasuo; Hirohata, Atsufumi.

In: Journal of Magnetism and Magnetic Materials, Vol. 473, 09.10.2018, p. 7-11.

Research output: Contribution to journalArticlepeer-review

Harvard

Ogasawara, T, Kim, J-Y, Ando, Y & Hirohata, A 2018, 'Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film', Journal of Magnetism and Magnetic Materials, vol. 473, pp. 7-11. https://doi.org/10.1016/j.jmmm.2018.10.035

APA

Ogasawara, T., Kim, J-Y., Ando, Y., & Hirohata, A. (2018). Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film. Journal of Magnetism and Magnetic Materials, 473, 7-11. https://doi.org/10.1016/j.jmmm.2018.10.035

Vancouver

Ogasawara T, Kim J-Y, Ando Y, Hirohata A. Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film. Journal of Magnetism and Magnetic Materials. 2018 Oct 9;473:7-11. https://doi.org/10.1016/j.jmmm.2018.10.035

Author

Ogasawara, Takahiro ; Kim, Jun-Young ; Ando, Yasuo ; Hirohata, Atsufumi. / Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film. In: Journal of Magnetism and Magnetic Materials. 2018 ; Vol. 473. pp. 7-11.

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@article{3e3971bbaa7c4298a90865c451d7921f,
title = "Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film",
abstract = "Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported N{\'e}el temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.",
author = "Takahiro Ogasawara and Jun-Young Kim and Yasuo Ando and Atsufumi Hirohata",
note = "{\textcopyright} 2018 The Authors. Published by Elsevier B.V. ",
year = "2018",
month = oct,
day = "9",
doi = "10.1016/j.jmmm.2018.10.035",
language = "English",
volume = "473",
pages = "7--11",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film

AU - Ogasawara, Takahiro

AU - Kim, Jun-Young

AU - Ando, Yasuo

AU - Hirohata, Atsufumi

N1 - © 2018 The Authors. Published by Elsevier B.V.

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported Néel temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.

AB - Distorted Heusler compound of D019 Mn3Ge polycrystalline films were studied in terms of their crystalline structures and antiferromagnetic behavior by varyingannealing temperature and Mn-Ge composition. Although low temperature growth for 30 nm Mn3Ge showed no diffraction peaks in X-ray diffraction patterns, hightemperature growth over 773 K with Mn-rich composition is found to promote the (0001) orientation of D019 Mn3Ge which resulted in the emergence of an exchangebias effect in Co0.6Fe0.4 ferromagnetic layer at 120 K. The exchange bias field of 12 Oe in Mn3.16Ge film grown at 773 K were improved to 61 Oe by enriching Mncomposition to Mn3.97Ge. The average blocking temperature was measured to be at 150 K which is not as high as its reported Néel temperature of 390 K in the bulkstate, however, further improvements are expected by doping additional transition elements.

U2 - 10.1016/j.jmmm.2018.10.035

DO - 10.1016/j.jmmm.2018.10.035

M3 - Article

VL - 473

SP - 7

EP - 11

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -