Research output: Contribution to journal › Article › peer-review
Journal | Physical Review B |
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Date | Published - 23 Apr 2012 |
Issue number | 14 |
Volume | 85 |
Number of pages | 8 |
Pages (from-to) | - |
Original language | English |
Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.
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