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Structural and magnetic properties of MBE-grown GeMnN2 thin films

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Structural and magnetic properties of MBE-grown GeMnN2 thin films. / Liu, Y.; Lazarov, V. K.; Cheung, S. H.; Keavney, D. J.; Gai, Z.; Gajdardziska-Josifovska, M.; Weinert, M.; Li, L.

In: Physical Review B, Vol. 85, No. 14, 144113, 23.04.2012, p. -.

Research output: Contribution to journalArticlepeer-review

Harvard

Liu, Y, Lazarov, VK, Cheung, SH, Keavney, DJ, Gai, Z, Gajdardziska-Josifovska, M, Weinert, M & Li, L 2012, 'Structural and magnetic properties of MBE-grown GeMnN2 thin films', Physical Review B, vol. 85, no. 14, 144113, pp. -. https://doi.org/10.1103/PhysRevB.85.144113

APA

Liu, Y., Lazarov, V. K., Cheung, S. H., Keavney, D. J., Gai, Z., Gajdardziska-Josifovska, M., Weinert, M., & Li, L. (2012). Structural and magnetic properties of MBE-grown GeMnN2 thin films. Physical Review B, 85(14), -. [144113]. https://doi.org/10.1103/PhysRevB.85.144113

Vancouver

Liu Y, Lazarov VK, Cheung SH, Keavney DJ, Gai Z, Gajdardziska-Josifovska M et al. Structural and magnetic properties of MBE-grown GeMnN2 thin films. Physical Review B. 2012 Apr 23;85(14):-. 144113. https://doi.org/10.1103/PhysRevB.85.144113

Author

Liu, Y. ; Lazarov, V. K. ; Cheung, S. H. ; Keavney, D. J. ; Gai, Z. ; Gajdardziska-Josifovska, M. ; Weinert, M. ; Li, L. / Structural and magnetic properties of MBE-grown GeMnN2 thin films. In: Physical Review B. 2012 ; Vol. 85, No. 14. pp. -.

Bibtex - Download

@article{bb2014a2d42a439c8f6fca4aef538c30,
title = "Structural and magnetic properties of MBE-grown GeMnN2 thin films",
abstract = "Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.",
author = "Y. Liu and Lazarov, {V. K.} and Cheung, {S. H.} and Keavney, {D. J.} and Z. Gai and M. Gajdardziska-Josifovska and M. Weinert and L. Li",
year = "2012",
month = apr,
day = "23",
doi = "10.1103/PhysRevB.85.144113",
language = "English",
volume = "85",
pages = "--",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "14",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Structural and magnetic properties of MBE-grown GeMnN2 thin films

AU - Liu, Y.

AU - Lazarov, V. K.

AU - Cheung, S. H.

AU - Keavney, D. J.

AU - Gai, Z.

AU - Gajdardziska-Josifovska, M.

AU - Weinert, M.

AU - Li, L.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.

AB - Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.

UR - http://www.scopus.com/inward/record.url?scp=84860266559&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.144113

DO - 10.1103/PhysRevB.85.144113

M3 - Article

VL - 85

SP - -

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 14

M1 - 144113

ER -