Abstract
Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional and three-dimensional (3D) dysprosium silicide films on the Si(I 11) surface. A quantitative study of the ion yield from the dysprosium has enabled the positions of the atoms in the top three layers of the Si(I 1 1)1 x 1-Dy to be precisely determined. For the case of the Si(I 1 1)(root3 x root3)R30degrees-Dy 3D silicide surface the experimental blocking curves are in agreement with simulations for the structural model determined by surface X-ray diffraction for the Si(I I I)(root3 x root3)R30degrees-Er 3D silicide surface. A contraction of 2.0 +/- 0.6% in the c-axis lattice constant compared to bulk dysprosium disilicide is found. (C) 2002 Elsevier Science B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 61-66 |
| Number of pages | 6 |
| Journal | Surface Science |
| Volume | 512 |
| Issue number | 1-2 |
| Publication status | Published - 20 Jun 2002 |
Keywords
- silicon
- silicides
- low index single crystal surfaces
- metal-semiconductor interfaces
- medium energy ion scattering (MEIS)
- surface relaxation and reconstruction
- 2-DIMENSIONAL ER SILICIDE
- RARE-EARTH SILICIDES
- ATOMIC-STRUCTURE
- SI(111)