Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction

H Kitayama; S P Tear; D J Spence; T Urano

Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction

H Kitayama, S P Tear, D J Spence, T Urano

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The Ho/Si(111)-1 x 1 and H-Ho/Si(111)-1 x 1 surfaces have been investigated by low energy electron diffraction I-V curve analysis. Several structural models have been tried and the optimum structure has been obtained using a combination of search methods. In the case of the Ho/Si(111) surface, Ho atoms sit on T4 sites of the Si(111) near bulk-like layer and are located underneath a Si bilayer which is rotated 180 degrees with respect to the substrate Si layers. This is the same structure as proposed by medium-energy ion scattering. In the case of the H-Ho/Si(111)-1 x 1 surface, Si atoms in the surface bilayer have normal stacking and are located above the same lateral position as the topmost bulk layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	1481-1486
Number of pages	6
Journal	Surface Science
Volume	482
Publication status	Published - 20 Jun 2001

Keywords

low energy electron diffraction (LEED)
lanthanides
silicides
2-DIMENSIONAL ER SILICIDE
SCHOTTKY-BARRIER
ION-SCATTERING
SI(111)
HYDROGEN
REVERSAL
ERSI2

Cite this

@article{fdc94b3226834648a22d86812ee72793,

title = "Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction",

abstract = "The Ho/Si(111)-1 x 1 and H-Ho/Si(111)-1 x 1 surfaces have been investigated by low energy electron diffraction I-V curve analysis. Several structural models have been tried and the optimum structure has been obtained using a combination of search methods. In the case of the Ho/Si(111) surface, Ho atoms sit on T4 sites of the Si(111) near bulk-like layer and are located underneath a Si bilayer which is rotated 180 degrees with respect to the substrate Si layers. This is the same structure as proposed by medium-energy ion scattering. In the case of the H-Ho/Si(111)-1 x 1 surface, Si atoms in the surface bilayer have normal stacking and are located above the same lateral position as the topmost bulk layer. (C) 2001 Elsevier Science B.V. All rights reserved.",

keywords = "low energy electron diffraction (LEED), lanthanides, silicides, 2-DIMENSIONAL ER SILICIDE, SCHOTTKY-BARRIER, ION-SCATTERING, SI(111), HYDROGEN, REVERSAL, ERSI2",

author = "H Kitayama and Tear, {S P} and Spence, {D J} and T Urano",

year = "2001",

month = jun,

day = "20",

language = "English",

volume = "482",

pages = "1481--1486",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

}

TY - JOUR

T1 - Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction

AU - Kitayama, H

AU - Tear, S P

AU - Spence, D J

AU - Urano, T

PY - 2001/6/20

Y1 - 2001/6/20

N2 - The Ho/Si(111)-1 x 1 and H-Ho/Si(111)-1 x 1 surfaces have been investigated by low energy electron diffraction I-V curve analysis. Several structural models have been tried and the optimum structure has been obtained using a combination of search methods. In the case of the Ho/Si(111) surface, Ho atoms sit on T4 sites of the Si(111) near bulk-like layer and are located underneath a Si bilayer which is rotated 180 degrees with respect to the substrate Si layers. This is the same structure as proposed by medium-energy ion scattering. In the case of the H-Ho/Si(111)-1 x 1 surface, Si atoms in the surface bilayer have normal stacking and are located above the same lateral position as the topmost bulk layer. (C) 2001 Elsevier Science B.V. All rights reserved.

AB - The Ho/Si(111)-1 x 1 and H-Ho/Si(111)-1 x 1 surfaces have been investigated by low energy electron diffraction I-V curve analysis. Several structural models have been tried and the optimum structure has been obtained using a combination of search methods. In the case of the Ho/Si(111) surface, Ho atoms sit on T4 sites of the Si(111) near bulk-like layer and are located underneath a Si bilayer which is rotated 180 degrees with respect to the substrate Si layers. This is the same structure as proposed by medium-energy ion scattering. In the case of the H-Ho/Si(111)-1 x 1 surface, Si atoms in the surface bilayer have normal stacking and are located above the same lateral position as the topmost bulk layer. (C) 2001 Elsevier Science B.V. All rights reserved.

KW - low energy electron diffraction (LEED)

KW - lanthanides

KW - silicides

KW - 2-DIMENSIONAL ER SILICIDE

KW - SCHOTTKY-BARRIER

KW - ION-SCATTERING

KW - SI(111)

KW - HYDROGEN

KW - REVERSAL

KW - ERSI2

M3 - Article

SN - 0039-6028

VL - 482

SP - 1481

EP - 1486

JO - Surface Science

JF - Surface Science

ER -