Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique

D K Wilkinson; M El-Gomati; M Prutton; G A Cooke; M G Dowsett; N S Smith

Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique

D K Wilkinson, M El-Gomati, M Prutton, G A Cooke, M G Dowsett, N S Smith

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A novel 'crossed bevel' technique has been used for the investigation of the evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2(+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy ion beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a high-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instrument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, was observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this technique is that it will enable the powerful multispectral chemometric capability of the MULSAM instrument to be applied to altered layer redistribution in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.

Original language	English
Pages (from-to)	840-848
Number of pages	11
Journal	Surface and Interface Analysis
Volume	27
Issue number	9
Publication status	Published - Sept 1999

Keywords

altered layer
SIMS
scanning Auger microprobe
SiGe
ion beam bevelling
ION
BOMBARDMENT
MICROSCOPY
OXIDATION
ENERGY

Cite this

@article{c1b204f8f6d74dd4bf2806c25a54989f,

title = "Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique",

abstract = "A novel 'crossed bevel' technique has been used for the investigation of the evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2(+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy ion beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a high-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instrument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, was observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this technique is that it will enable the powerful multispectral chemometric capability of the MULSAM instrument to be applied to altered layer redistribution in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.",

keywords = "altered layer, SIMS, scanning Auger microprobe, SiGe, ion beam bevelling, ION, BOMBARDMENT, MICROSCOPY, OXIDATION, ENERGY",

author = "Wilkinson, {D K} and M El-Gomati and M Prutton and Cooke, {G A} and Dowsett, {M G} and Smith, {N S}",

year = "1999",

month = sep,

language = "English",

volume = "27",

pages = "840--848",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "Wiley-Blackwell",

number = "9",

}

TY - JOUR

T1 - Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique

AU - Wilkinson, D K

AU - El-Gomati, M

AU - Prutton, M

AU - Cooke, G A

AU - Dowsett, M G

AU - Smith, N S

PY - 1999/9

Y1 - 1999/9

N2 - A novel 'crossed bevel' technique has been used for the investigation of the evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2(+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy ion beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a high-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instrument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, was observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this technique is that it will enable the powerful multispectral chemometric capability of the MULSAM instrument to be applied to altered layer redistribution in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.

AB - A novel 'crossed bevel' technique has been used for the investigation of the evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2(+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy ion beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a high-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instrument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, was observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this technique is that it will enable the powerful multispectral chemometric capability of the MULSAM instrument to be applied to altered layer redistribution in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.

KW - altered layer

KW - SIMS

KW - scanning Auger microprobe

KW - SiGe

KW - ion beam bevelling

KW - ION

KW - BOMBARDMENT

KW - MICROSCOPY

KW - OXIDATION

KW - ENERGY

M3 - Article

SN - 0142-2421

VL - 27

SP - 840

EP - 848

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 9

ER -