Study of bevelled InP-based heterostructures by low energy SEM and AES

R Srnanek, A Satka, J Liday, P Vogrincic, J Kovac, M Zadrazil, L Frank, M El Gomati

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on low energy scanning electron microscopy characterisation of chemically bevelled InP/InGaAs/InGaAlAs and InP/InGaAsP heterostructures. A thickness of 3 nm for InP/InGaAlAs, 2 nm for InGaAs/InGaAlAs and 4-6 nn for InP/InGaAsP interfaces were obtained. These were compared with measurements by Auger electron spectroscopy (AES).

Original languageEnglish
Title of host publicationELECTRON MICROSCOPY AND ANALYSIS 1997
EditorsJM Rodenburg
Place of PublicationBRISTOL
PublisherIOP Publishing
Pages453-456
Number of pages4
ISBN (Print)0-7503-0441-3
Publication statusPublished - 1997
Event1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97) - CAMBRIDGE
Duration: 2 Sept 19975 Sept 1997

Conference

Conference1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97)
CityCAMBRIDGE
Period2/09/975/09/97

Keywords

  • CATHODE LENS

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