Abstract
We report on low energy scanning electron microscopy characterisation of chemically bevelled InP/InGaAs/InGaAlAs and InP/InGaAsP heterostructures. A thickness of 3 nm for InP/InGaAlAs, 2 nm for InGaAs/InGaAlAs and 4-6 nn for InP/InGaAsP interfaces were obtained. These were compared with measurements by Auger electron spectroscopy (AES).
Original language | English |
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Title of host publication | ELECTRON MICROSCOPY AND ANALYSIS 1997 |
Editors | JM Rodenburg |
Place of Publication | BRISTOL |
Publisher | IOP Publishing |
Pages | 453-456 |
Number of pages | 4 |
ISBN (Print) | 0-7503-0441-3 |
Publication status | Published - 1997 |
Event | 1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97) - CAMBRIDGE Duration: 2 Sept 1997 → 5 Sept 1997 |
Conference
Conference | 1997 Biennial Meeting of the Electron-Microscopy-and-Analysis-Group of the Institute-of-Physics (EMAG 97) |
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City | CAMBRIDGE |
Period | 2/09/97 → 5/09/97 |
Keywords
- CATHODE LENS