Abstract
In this paper, we present results from monolithic passively mode-locked GaAs/AlGaAs quantum well lasers operating
at 830 nm. Colliding pulse mode locking is achieved at repetition
rates of 126 GHz with pulsewidths as short as 0.43 ps, an unprecedented value in monolithic semiconductor lasers operating at
such high pulse repetition rates. We use a double quantum well
laser epistructure with larger mode size d/Г (d is the quantum
well thickness and Г is the optical confinement) and investigate the
effect of the saturable absorber length on the mode-locking operation. The experimental results are theoretically explained and
reproduced using a traveling wave model with an improved timedomain response for both the gain and the absorber sections of the
device. The model confirms that the thermally induced spectral detuning of the absorber relative to the gain section determines both
the optimal absorber length and the optimal biasing conditi
at 830 nm. Colliding pulse mode locking is achieved at repetition
rates of 126 GHz with pulsewidths as short as 0.43 ps, an unprecedented value in monolithic semiconductor lasers operating at
such high pulse repetition rates. We use a double quantum well
laser epistructure with larger mode size d/Г (d is the quantum
well thickness and Г is the optical confinement) and investigate the
effect of the saturable absorber length on the mode-locking operation. The experimental results are theoretically explained and
reproduced using a traveling wave model with an improved timedomain response for both the gain and the absorber sections of the
device. The model confirms that the thermally induced spectral detuning of the absorber relative to the gain section determines both
the optimal absorber length and the optimal biasing conditi
| Original language | English |
|---|---|
| Article number | 1100608 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 19 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jul 2013 |