Abstract
The surface electronic structure of two- and three-dimensional Ho silicides grown on Si(111) has been studied with the techniques of metastable de-excitation spectroscopy (MDS) and ultraviolet photoemission spectroscopy. Electronic structure differences between the two cases are examined, and the extreme sensitivity of MDS to the surface density of states (DOS) allows a direct comparison between deconvolved spectra and ab initio density-functional theory calculations. This comparison shows a good agreement between the DOS calculated for the Si(111)-1x1-Ho structure and MDS data obtained from an almost-complete layer of two-dimensional Ho silicide. The dominant role of the topmost silicon bilayer in determining the surface electronic properties is revealed.</p>.
| Original language | English |
|---|---|
| Article number | 245406 |
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Physical Review B |
| Volume | 79 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 5 Jun 2009 |
Keywords
- ab initio calculations
- density functional theory
- electronic density of states
- electronic structure
- holmium compounds
- surface states
- ultraviolet photoelectron spectra
- ENERGY ION-SCATTERING
- EPITAXIAL ER SILICIDE
- DYSPROSIUM GERMANIDE
- YTTRIUM-DISILICIDE
- ATOMIC-STRUCTURE
- STATES
- SPECTROSCOPY
- STM
- DIFFRACTION
- ADSORPTION