Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Evan Dimech; John Frederick Dawson

doi:10.1109/IECON.2019.8926643

Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Evan Dimech, John Frederick Dawson

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents an experimental study and reports the monitored changes in the switching parameters (quoted in datasheets) of Insulated Gate Bipolar Transistors (IGBTs) when subjected to accelerated ageing through thermo-electrical overstress. The study describes how the accelerated ageing strategy was implemented. Tested IGBTs were characterized before and after accelerated ageing. Details are presented of the IGBT switching parameters characterization setup and the employed Double Pulse technique. Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed.

Original language	English
Title of host publication	IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
Place of Publication	Lisbon, Portugal
Pages	4648-4653
Number of pages	6
DOIs	https://doi.org/10.1109/IECON.2019.8926643
Publication status	Published - 14 Oct 2019

Bibliographical note

Submitted April 2019, Accepted 14/07/2019

Access to Document

10.1109/IECON.2019.8926643

IECON 2018 - Evan Dimech John Dawson PostprintAccepted author manuscript, 915 KBLicence: Other

https://iecon2019.org/

1 Finished

EMS: Electromagnetic Monitoring of Semiconductor Ageing
Dawson, J. F. (Principal investigator), Flintoft, I. D. (Co-investigator) & Dimech, E. (Student)
1/10/14 → 1/10/20
Project: Other project › Miscellaneous project

Cite this

@inproceedings{88c7da4ea452466081f51261e0a58716,

title = "Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress",

abstract = "This paper presents an experimental study and reports the monitored changes in the switching parameters (quoted in datasheets) of Insulated Gate Bipolar Transistors (IGBTs) when subjected to accelerated ageing through thermo-electrical overstress. The study describes how the accelerated ageing strategy was implemented. Tested IGBTs were characterized before and after accelerated ageing. Details are presented of the IGBT switching parameters characterization setup and the employed Double Pulse technique. Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed.",

author = "Evan Dimech and Dawson, {John Frederick}",

note = "Submitted April 2019, Accepted 14/07/2019",

year = "2019",

month = oct,

day = "14",

doi = "10.1109/IECON.2019.8926643",

language = "English",

pages = "4648--4653",

booktitle = "IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society",

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TY - GEN

T1 - Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

AU - Dimech, Evan

AU - Dawson, John Frederick

N1 - Submitted April 2019, Accepted 14/07/2019

PY - 2019/10/14

Y1 - 2019/10/14

N2 - This paper presents an experimental study and reports the monitored changes in the switching parameters (quoted in datasheets) of Insulated Gate Bipolar Transistors (IGBTs) when subjected to accelerated ageing through thermo-electrical overstress. The study describes how the accelerated ageing strategy was implemented. Tested IGBTs were characterized before and after accelerated ageing. Details are presented of the IGBT switching parameters characterization setup and the employed Double Pulse technique. Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed.

AB - This paper presents an experimental study and reports the monitored changes in the switching parameters (quoted in datasheets) of Insulated Gate Bipolar Transistors (IGBTs) when subjected to accelerated ageing through thermo-electrical overstress. The study describes how the accelerated ageing strategy was implemented. Tested IGBTs were characterized before and after accelerated ageing. Details are presented of the IGBT switching parameters characterization setup and the employed Double Pulse technique. Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed.

U2 - 10.1109/IECON.2019.8926643

DO - 10.1109/IECON.2019.8926643

M3 - Conference contribution

SP - 4648

EP - 4653

BT - IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society

CY - Lisbon, Portugal

ER -

Switching Parameters Characterization of Aged IGBTs by Thermo-Electrical Overstress

Abstract

Bibliographical note

Access to Document

Projects

EMS: Electromagnetic Monitoring of Semiconductor Ageing

Cite this