Synthesis and transport properties of SrTiO3-xNy/SrTiO3-delta layered structures produced by microwave-induced plasma nitridation

A. Shkabko, M. H. Aguirre, I. Marozau, T. Lippert, Y-H Chou, R. E. Douthwaite, A. Weidenkaff

Research output: Contribution to journalArticlepeer-review

Abstract

SrTiO3-xNy/SrTiO3-delta layered structures were synthesized from single crystals of SrTiO3 (1 0 0) by ammonolysis using a microwave-induced plasma (MIP). Samples prepared using a low ammonia flow rate (50-100 mL min(-1)) gave nanocrystals of TiN at the surface, while the samples prepared in an ammonia flow in the range 125-175 mL min(-1) did not show impurity phases. Electrical resistance measurements of SrTiO3-xNy/SrTiO3-delta single crystals show metallic-like behaviour in the temperature range 2-300 K, with a residual resistance ratio R(300 K)/R(4.2 K) of ca 50. The Hall mobility follows the power law mu(H) proportional to T-2.3 in the temperature range 150-300 K, which is attributed to n-type charge carriers.

Original languageEnglish
Article number145202
Pages (from-to)-
Number of pages8
JournalJournal of Physics D: Applied Physics
Volume42
Issue number14
DOIs
Publication statusPublished - 21 Jul 2009

Keywords

  • RAY PHOTOELECTRON-SPECTROSCOPY
  • PULSED-LASER DEPOSITION
  • SRTIO3 THIN-FILMS
  • STRONTIUM-TITANATE
  • DOPED SRTIO3
  • ELECTRONIC-STRUCTURE
  • SURFACE
  • CHEMISTRY
  • NITROGEN
  • PEROVSKITES

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