Abstract
SrTiO3-xNy/SrTiO3-delta layered structures were synthesized from single crystals of SrTiO3 (1 0 0) by ammonolysis using a microwave-induced plasma (MIP). Samples prepared using a low ammonia flow rate (50-100 mL min(-1)) gave nanocrystals of TiN at the surface, while the samples prepared in an ammonia flow in the range 125-175 mL min(-1) did not show impurity phases. Electrical resistance measurements of SrTiO3-xNy/SrTiO3-delta single crystals show metallic-like behaviour in the temperature range 2-300 K, with a residual resistance ratio R(300 K)/R(4.2 K) of ca 50. The Hall mobility follows the power law mu(H) proportional to T-2.3 in the temperature range 150-300 K, which is attributed to n-type charge carriers.
Original language | English |
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Article number | 145202 |
Pages (from-to) | - |
Number of pages | 8 |
Journal | Journal of Physics D: Applied Physics |
Volume | 42 |
Issue number | 14 |
DOIs | |
Publication status | Published - 21 Jul 2009 |
Keywords
- RAY PHOTOELECTRON-SPECTROSCOPY
- PULSED-LASER DEPOSITION
- SRTIO3 THIN-FILMS
- STRONTIUM-TITANATE
- DOPED SRTIO3
- ELECTRONIC-STRUCTURE
- SURFACE
- CHEMISTRY
- NITROGEN
- PEROVSKITES