The attempt frequency of the antiferromagnetic alloy MnN

Fatimah Alsaud; William James Frost; Gonzalo Vallejo Fernandez

The attempt frequency of the antiferromagnetic alloy MnN

Fatimah Alsaud, William James Frost, Gonzalo Vallejo Fernandez^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The operating frequency of a magnetic device is limited by the attempt frequency of the specific material. We have determined the characteristic relaxation frequency of a polycrystalline MnN layer from a measurement of the time dependence of the median blocking temperature in a MnN/CoFe system. A value of (1.5±0.4)×10¹² Hz was obtained based on calculations using a granular model. This result is in very good agreement with values reported for other antiferromagnetic materials such as IrMn and highlights the potential of MnN for device applications.

Original language	English
Journal	Physica Scripta
Publication status	Accepted/In press - 4 Dec 2024

Cite this

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title = "The attempt frequency of the antiferromagnetic alloy MnN",

abstract = "The operating frequency of a magnetic device is limited by the attempt frequency of the specific material. We have determined the characteristic relaxation frequency of a polycrystalline MnN layer from a measurement of the time dependence of the median blocking temperature in a MnN/CoFe system. A value of (1.5±0.4)×1012 Hz was obtained based on calculations using a granular model. This result is in very good agreement with values reported for other antiferromagnetic materials such as IrMn and highlights the potential of MnN for device applications.",

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T1 - The attempt frequency of the antiferromagnetic alloy MnN

AU - Alsaud, Fatimah

AU - Frost, William James

AU - Vallejo Fernandez, Gonzalo

PY - 2024/12/4

Y1 - 2024/12/4

N2 - The operating frequency of a magnetic device is limited by the attempt frequency of the specific material. We have determined the characteristic relaxation frequency of a polycrystalline MnN layer from a measurement of the time dependence of the median blocking temperature in a MnN/CoFe system. A value of (1.5±0.4)×1012 Hz was obtained based on calculations using a granular model. This result is in very good agreement with values reported for other antiferromagnetic materials such as IrMn and highlights the potential of MnN for device applications.

AB - The operating frequency of a magnetic device is limited by the attempt frequency of the specific material. We have determined the characteristic relaxation frequency of a polycrystalline MnN layer from a measurement of the time dependence of the median blocking temperature in a MnN/CoFe system. A value of (1.5±0.4)×1012 Hz was obtained based on calculations using a granular model. This result is in very good agreement with values reported for other antiferromagnetic materials such as IrMn and highlights the potential of MnN for device applications.

M3 - Article

SN - 0031-8949

JO - Physica Scripta

JF - Physica Scripta

ER -