Abstract
The determination of the dopant concentration in semiconductors at the nanometre scale is an important technological goal One possible approach is to use the dopant contrast (DC) effect m low voltage scanning electron microscopy (LVSEM) The DC effect normally causes p-doped semiconducting material to appear brighter than n-doped in a LVSEM and the contrast is dependent on the dopant concentration In this report we have studied highly doped p- and n-type silicon with thick oxide layers and after the oxide layer was removed by dipping in diluted HF DC was measured as a function of primary beam voltage It was found that the DC could be reversed (i e n-type brighter than p-type) at higher primary beam voltages for the thicker oxide, but such reversals were not apparent for the thinner oxide By comparing with results from different electron emission techniques such as photoemission and field emission it can be concluded that oxygen plays an important role in DC not just for monolayer thicknesses as previously recognised, but also for much thicker oxides
| Original language | English |
|---|---|
| Title of host publication | 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS |
| Editors | T Walther, PD Nellist, JL Hutchison, AG Cullis |
| Place of Publication | BRISTOL |
| Publisher | IOP Publishing |
| Pages | - |
| Number of pages | 4 |
| ISBN (Print) | ***************** |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 16th International Conference on Microscopy of Semiconducting Materials - Oxford Duration: 17 Mar 2009 → 20 Mar 2009 |
Conference
| Conference | 16th International Conference on Microscopy of Semiconducting Materials |
|---|---|
| City | Oxford |
| Period | 17/03/09 → 20/03/09 |
Keywords
- LOW-VOLTAGE SEM
- DOPANT CONTRAST
- SILICON
- MICROSCOPY
- REGIONS
- UPDATE