The chemisorption of oxygen and its effect on the secondary electron emission from doped semiconductors

F. N. Zaggout, C. G. H. Walker, M. M. El Gomati

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The determination of the dopant concentration in semiconductors at the nanometre scale is an important technological goal One possible approach is to use the dopant contrast (DC) effect m low voltage scanning electron microscopy (LVSEM) The DC effect normally causes p-doped semiconducting material to appear brighter than n-doped in a LVSEM and the contrast is dependent on the dopant concentration In this report we have studied highly doped p- and n-type silicon with thick oxide layers and after the oxide layer was removed by dipping in diluted HF DC was measured as a function of primary beam voltage It was found that the DC could be reversed (i e n-type brighter than p-type) at higher primary beam voltages for the thicker oxide, but such reversals were not apparent for the thinner oxide By comparing with results from different electron emission techniques such as photoemission and field emission it can be concluded that oxygen plays an important role in DC not just for monolayer thicknesses as previously recognised, but also for much thicker oxides

Original languageEnglish
Title of host publication16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS
EditorsT Walther, PD Nellist, JL Hutchison, AG Cullis
Place of PublicationBRISTOL
PublisherIOP Publishing
Pages-
Number of pages4
ISBN (Print)*****************
DOIs
Publication statusPublished - 2010
Event16th International Conference on Microscopy of Semiconducting Materials - Oxford
Duration: 17 Mar 200920 Mar 2009

Conference

Conference16th International Conference on Microscopy of Semiconducting Materials
CityOxford
Period17/03/0920/03/09

Keywords

  • LOW-VOLTAGE SEM
  • DOPANT CONTRAST
  • SILICON
  • MICROSCOPY
  • REGIONS
  • UPDATE

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