The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors

F. Zaggout; M. El-Gomati

The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials
Editors	AG Cullis, JL Hutchison
Place of Publication	BERLIN
Publisher	Springer
Pages	523-526
Number of pages	4
ISBN (Print)	3-540-31914-X
Publication status	Published - 2005
Event	14th Conference on Microscopy of Semiconducting Materials - Oxford Duration: 11 Apr 2005 → 14 Apr 2005

Conference

Conference	14th Conference on Microscopy of Semiconducting Materials
City	Oxford
Period	11/04/05 → 14/04/05

Cite this

@inproceedings{69c9890de747424fa840de38f0da775a,

title = "The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors",

abstract = "The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.",

author = "F. Zaggout and M. El-Gomati",

year = "2005",

language = "English",

isbn = "3-540-31914-X",

pages = "523--526",

editor = "AG Cullis and JL Hutchison",

booktitle = "Microscopy of Semiconducting Materials",

publisher = "Springer",

address = "Germany",

note = "14th Conference on Microscopy of Semiconducting Materials ; Conference date: 11-04-2005 Through 14-04-2005",

}

TY - GEN

T1 - The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors

AU - Zaggout, F.

AU - El-Gomati, M.

PY - 2005

Y1 - 2005

N2 - The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.

AB - The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.

M3 - Conference contribution

SN - 3-540-31914-X

SP - 523

EP - 526

BT - Microscopy of Semiconducting Materials

A2 - Cullis, AG

A2 - Hutchison, JL

PB - Springer

CY - BERLIN

T2 - 14th Conference on Microscopy of Semiconducting Materials

Y2 - 11 April 2005 through 14 April 2005

ER -