The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors

F. Zaggout, M. El-Gomati

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials
EditorsAG Cullis, JL Hutchison
Place of PublicationBERLIN
Number of pages4
ISBN (Print)3-540-31914-X
Publication statusPublished - 2005
Event14th Conference on Microscopy of Semiconducting Materials - Oxford
Duration: 11 Apr 200514 Apr 2005


Conference14th Conference on Microscopy of Semiconducting Materials

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