Abstract
The effect of heat treatment on the electrical behavior of aluminum on n-type silicon (Al/Si Schottky junctions) is used to study the effect of barrier height variation on secondary electron dopant contrast by annealing to 500 degrees C. In this study, the variation of the Schottky barrier height has been detected as an increase of the contrast between Al on p(+) and Al on n-type Si doped regions. This increase is attributed to a decrease in the SE yield of the Al/n-type Si contact due to an increase in the Schottky barrier height after annealing.
Original language | English |
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Title of host publication | Microscopy of Semiconducting Materials |
Editors | AG Cullis, JL Hutchison |
Place of Publication | BERLIN |
Publisher | Springer |
Pages | 523-526 |
Number of pages | 4 |
ISBN (Print) | 3-540-31914-X |
Publication status | Published - 2005 |
Event | 14th Conference on Microscopy of Semiconducting Materials - Oxford Duration: 11 Apr 2005 → 14 Apr 2005 |
Conference
Conference | 14th Conference on Microscopy of Semiconducting Materials |
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City | Oxford |
Period | 11/04/05 → 14/04/05 |