The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves

V. K. Lazarov; K. Yoshida; J. Sato; P. J. Hasnip; M. Oogane; A. Hirohata; Y. Ando

doi:10.1063/1.3600792

The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves

V. K. Lazarov, K. Yoshida, J. Sato, P. J. Hasnip, M. Oogane, A. Hirohata, Y. Ando

Research output: Contribution to journal › Article › peer-review

Abstract

We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L2(1) but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L2(1). The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600792]

Original language	English
Article number	242508
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3600792
Publication status	Published - 13 Jun 2011

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http://apl.aip.org/resource/1/applab/v98/i24/p242508_s1

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title = "The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves",

abstract = "We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L2(1) but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L2(1). The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600792]",

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T1 - The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves

AU - Lazarov, V. K.

AU - Yoshida, K.

AU - Sato, J.

AU - Hasnip, P. J.

AU - Oogane, M.

AU - Hirohata, A.

AU - Ando, Y.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L2(1) but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L2(1). The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600792]

AB - We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L2(1) but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L2(1). The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600792]

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The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves

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