The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves

V. K. Lazarov, K. Yoshida, J. Sato, P. J. Hasnip, M. Oogane, A. Hirohata, Y. Ando

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We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L2(1) but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L2(1). The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600792]

Original languageEnglish
Article number242508
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 13 Jun 2011

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