The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

Michael B. Reakes; Chris Eames; Steve P. Tear

doi:10.1088/0953-8984/21/26/265001

The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

Michael B. Reakes, Chris Eames, Steve P. Tear

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.

Original language	English
Article number	265001
Pages (from-to)	-
Number of pages	7
Journal	Journal of physics : Condensed matter
Volume	21
Issue number	26
DOIs	https://doi.org/10.1088/0953-8984/21/26/265001
Publication status	Published - 1 Jul 2009

Keywords

ELECTRONIC-STRUCTURE
MANGANESE SILICIDE
EPITAXIAL-GROWTH
SCHOTTKY-BARRIER
ROOM-TEMPERATURE
FILMS
CLUSTERS
SI

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10.1088/0953-8984/21/26/265001

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abstract = "The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.",

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T1 - The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

AU - Reakes, Michael B.

AU - Eames, Chris

AU - Tear, Steve P.

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N2 - The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.

AB - The growth of ordered Mn layers on room temperature and liquid nitrogen cooled Si(111)-1 x 1-Ho surfaces has been studied using scanning tunnelling microscopy. We have shown for 4 ML (monolayers) of Mn grown on a cooled Si(111)-1 x 1-Ho surface that an ordered Mn layer is produced without any, or with only limited, silicide formation. This surface exhibits a (root 3 x root 3)R30 degrees low energy electron diffraction pattern. Significant variations in Mn island sizes have also been seen on the Si(111)-1 x 1-Ho and Si(111)-7 x 7 surfaces for Mn deposited at room temperature and at-180 degrees C.

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KW - MANGANESE SILICIDE

KW - EPITAXIAL-GROWTH

KW - SCHOTTKY-BARRIER

KW - ROOM-TEMPERATURE

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KW - CLUSTERS

KW - SI

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JF - Journal of physics : Condensed matter

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M1 - 265001

ER -

The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface

Abstract

Keywords

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