The microstructure origin of large strain plastically deformed SiC nanowires

Xin Fu; Jun Jiang; Xuerang Hu; Jun Yuan; YueFei Zhang; Xiaodong Han; Ze Zhang

The microstructure origin of large strain plastically deformed SiC nanowires

Xin Fu, Jun Jiang, Xuerang Hu, Jun Yuan, YueFei Zhang, Xiaodong Han, Ze Zhang

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the "red shift" of the plasmon peak and the characteristic fine structure at Si L-edge absorption are consistent with local amorphisation of SiC. The recorded C K-edge fine structure is processed to remove the contribution from the surface amorphous carbon and the extracted C K-edge fine structure has no characteristic sp2-related pre-edge peak and hence is also consistent with amorphous SiC. These results suggest that the large strain plasticity in SiC nanowires is enabled by crystalline-to-amorphous transition.

Original language	English
Title of host publication	EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007
Editors	RT Baker, G Mobus, PD Brown
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	12072-12072
Number of pages	4
Publication status	Published - 2008

Bibliographical note

Art. no. 012072

Keywords

STRENGTH

Cite this

@inproceedings{a7d3d74f39d8498f923aa34c56e978a8,

title = "The microstructure origin of large strain plastically deformed SiC nanowires",

abstract = "Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the {"}red shift{"} of the plasmon peak and the characteristic fine structure at Si L-edge absorption are consistent with local amorphisation of SiC. The recorded C K-edge fine structure is processed to remove the contribution from the surface amorphous carbon and the extracted C K-edge fine structure has no characteristic sp2-related pre-edge peak and hence is also consistent with amorphous SiC. These results suggest that the large strain plasticity in SiC nanowires is enabled by crystalline-to-amorphous transition.",

keywords = "STRENGTH",

author = "Xin Fu and Jun Jiang and Xuerang Hu and Jun Yuan and YueFei Zhang and Xiaodong Han and Ze Zhang",

note = "Art. no. 012072",

year = "2008",

language = "English",

pages = "12072--12072",

editor = "RT Baker and G Mobus and PD Brown",

booktitle = "EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007",

publisher = "IOP Publishing",

address = "United Kingdom",

}

TY - GEN

T1 - The microstructure origin of large strain plastically deformed SiC nanowires

AU - Fu, Xin

AU - Jiang, Jun

AU - Hu, Xuerang

AU - Yuan, Jun

AU - Zhang, YueFei

AU - Han, Xiaodong

AU - Zhang, Ze

N1 - Art. no. 012072

PY - 2008

Y1 - 2008

N2 - Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the "red shift" of the plasmon peak and the characteristic fine structure at Si L-edge absorption are consistent with local amorphisation of SiC. The recorded C K-edge fine structure is processed to remove the contribution from the surface amorphous carbon and the extracted C K-edge fine structure has no characteristic sp2-related pre-edge peak and hence is also consistent with amorphous SiC. These results suggest that the large strain plasticity in SiC nanowires is enabled by crystalline-to-amorphous transition.

AB - Surprisingly large strain plasticity has been demonstrated for ceramic SiC nanowires through in-situ deformation experiments near room temperature. This article reports a detailed electron energy-loss spectroscopy (EELS) study of deformation-induced localized plastic zones in a bent SiC nanowire. Both the "red shift" of the plasmon peak and the characteristic fine structure at Si L-edge absorption are consistent with local amorphisation of SiC. The recorded C K-edge fine structure is processed to remove the contribution from the surface amorphous carbon and the extracted C K-edge fine structure has no characteristic sp2-related pre-edge peak and hence is also consistent with amorphous SiC. These results suggest that the large strain plasticity in SiC nanowires is enabled by crystalline-to-amorphous transition.

KW - STRENGTH

UR - http://www.scopus.com/inward/record.url?scp=65649108616&partnerID=8YFLogxK

M3 - Conference contribution

SP - 12072

EP - 12072

BT - EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007

A2 - Baker, RT

A2 - Mobus, G

A2 - Brown, PD

PB - IOP Publishing

CY - BRISTOL

ER -

The microstructure origin of large strain plastically deformed SiC nanowires

Abstract

Bibliographical note

Keywords

Other files and links

Cite this