The role of anisotropy for defect properties in a-plane GaN

R. Kröger*, T. Paskova

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Defect formation in wurtzite a-plane gallium nitride grown on r-plane sapphire has been studied using transmission electron microscopy. The observed defect pattern grown along the [11-20] direction shows significant differences compared to films grown along the [0001] direction. Predominant line defects identified in the a-plane GaN are Frank-Shockley partial dislocations bounding basal plane stacking faults and originating at the film/substrate interface. In order to understand the impact of the anisotropic elastic properties of the wurtzite structure on the dislocation formation and the stress around the dislocations anisotropic plane strain elasticity theory was applied and compared with results obtained from isotropic theory calculations. Furthermore, dislocation properties were calculated for AlN and InN. It was found that the line energy found for InN amounts only to about one third of the values obtained for GaN and AlN.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices III
Volume6894
DOIs
Publication statusPublished - 21 Apr 2008
EventSociety of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
Duration: 21 Jan 200824 Jan 2008

Conference

ConferenceSociety of Photo-Optical Instrumentation Engineers (SPIE)
Country/TerritoryUnited States
CitySan Jose, CA
Period21/01/0824/01/08

Keywords

  • A-plane GaN
  • Anisotropy
  • Defects
  • Transmission electron microscopy

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