By the same authors

The role of anisotropy for defect properties in a-plane GaN

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Standard

The role of anisotropy for defect properties in a-plane GaN. / Kröger, R.; Paskova, T.

Gallium Nitride Materials and Devices III. Vol. 6894 2008. 689403.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harvard

Kröger, R & Paskova, T 2008, The role of anisotropy for defect properties in a-plane GaN. in Gallium Nitride Materials and Devices III. vol. 6894, 689403, Society of Photo-Optical Instrumentation Engineers (SPIE), San Jose, CA, United States, 21/01/08. https://doi.org/10.1117/12.763596

APA

Kröger, R., & Paskova, T. (2008). The role of anisotropy for defect properties in a-plane GaN. In Gallium Nitride Materials and Devices III (Vol. 6894). [689403] https://doi.org/10.1117/12.763596

Vancouver

Kröger R, Paskova T. The role of anisotropy for defect properties in a-plane GaN. In Gallium Nitride Materials and Devices III. Vol. 6894. 2008. 689403 https://doi.org/10.1117/12.763596

Author

Kröger, R. ; Paskova, T. / The role of anisotropy for defect properties in a-plane GaN. Gallium Nitride Materials and Devices III. Vol. 6894 2008.

Bibtex - Download

@inproceedings{c2559fa8a92544508b41c5482271fed3,
title = "The role of anisotropy for defect properties in a-plane GaN",
abstract = "Defect formation in wurtzite a-plane gallium nitride grown on r-plane sapphire has been studied using transmission electron microscopy. The observed defect pattern grown along the [11-20] direction shows significant differences compared to films grown along the [0001] direction. Predominant line defects identified in the a-plane GaN are Frank-Shockley partial dislocations bounding basal plane stacking faults and originating at the film/substrate interface. In order to understand the impact of the anisotropic elastic properties of the wurtzite structure on the dislocation formation and the stress around the dislocations anisotropic plane strain elasticity theory was applied and compared with results obtained from isotropic theory calculations. Furthermore, dislocation properties were calculated for AlN and InN. It was found that the line energy found for InN amounts only to about one third of the values obtained for GaN and AlN.",
keywords = "A-plane GaN, Anisotropy, Defects, Transmission electron microscopy",
author = "R. Kr{\"o}ger and T. Paskova",
year = "2008",
month = apr,
day = "21",
doi = "10.1117/12.763596",
language = "English",
isbn = "9780819470690",
volume = "6894",
booktitle = "Gallium Nitride Materials and Devices III",
note = "Society of Photo-Optical Instrumentation Engineers (SPIE) ; Conference date: 21-01-2008 Through 24-01-2008",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - The role of anisotropy for defect properties in a-plane GaN

AU - Kröger, R.

AU - Paskova, T.

PY - 2008/4/21

Y1 - 2008/4/21

N2 - Defect formation in wurtzite a-plane gallium nitride grown on r-plane sapphire has been studied using transmission electron microscopy. The observed defect pattern grown along the [11-20] direction shows significant differences compared to films grown along the [0001] direction. Predominant line defects identified in the a-plane GaN are Frank-Shockley partial dislocations bounding basal plane stacking faults and originating at the film/substrate interface. In order to understand the impact of the anisotropic elastic properties of the wurtzite structure on the dislocation formation and the stress around the dislocations anisotropic plane strain elasticity theory was applied and compared with results obtained from isotropic theory calculations. Furthermore, dislocation properties were calculated for AlN and InN. It was found that the line energy found for InN amounts only to about one third of the values obtained for GaN and AlN.

AB - Defect formation in wurtzite a-plane gallium nitride grown on r-plane sapphire has been studied using transmission electron microscopy. The observed defect pattern grown along the [11-20] direction shows significant differences compared to films grown along the [0001] direction. Predominant line defects identified in the a-plane GaN are Frank-Shockley partial dislocations bounding basal plane stacking faults and originating at the film/substrate interface. In order to understand the impact of the anisotropic elastic properties of the wurtzite structure on the dislocation formation and the stress around the dislocations anisotropic plane strain elasticity theory was applied and compared with results obtained from isotropic theory calculations. Furthermore, dislocation properties were calculated for AlN and InN. It was found that the line energy found for InN amounts only to about one third of the values obtained for GaN and AlN.

KW - A-plane GaN

KW - Anisotropy

KW - Defects

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=42149173739&partnerID=8YFLogxK

U2 - 10.1117/12.763596

DO - 10.1117/12.763596

M3 - Conference contribution

AN - SCOPUS:42149173739

SN - 9780819470690

VL - 6894

BT - Gallium Nitride Materials and Devices III

T2 - Society of Photo-Optical Instrumentation Engineers (SPIE)

Y2 - 21 January 2008 through 24 January 2008

ER -