@book{c632bc66b8704325933774ff63c9b04c,
title = "The role of sub-contact layers in the optimization of low-resistivity contacts to p-type GaN",
abstract = "The reduction of the resistivity of Pd/Au contacts on p-type GaN:Mg by the implementation of subcontact layers is investigated. First, a strained InGaN:Mg layer was used which is thought to reduce the Schottky barrier height in the presence of polarization fields. Second, a heavily doped GaN:Mg layer with maximized hole concentration was used as a sub-contact layer. In both cases, the specific contact resistance was decreased by about two orders of magnitude from 1 x 10(-3) Omega cm(2) to 1-2 x 10(-5) Omega cm(2) due to the increase of the free hole concentration in the subcontact layer.",
author = "J. Dennemarck and T. Bottcher and S. Figge and S. Einfeldt and R. Kroger and D. Hommel and E. Kaminska and W. Wiatroszak and A. Piotrowska",
note = "Times Cited: 0 5th International Symposium on Blue Laser and Light Emitting Diodes MAR 15-19, 2004 Gyeongju, SOUTH KOREA Res Soc Wide gap Semicond; Korean Phys Soc; Off Naval Res; Korea Sci & Engn Fdn; Korea Res Fdn; Korea Assoc Photon Ind Dev; Asian Off Aerosp Res & Dev; Korea Photon Technol Inst",
year = "2004",
doi = "10.1002/pssc.200405105",
language = "Undefined/Unknown",
series = "5th International Symposium on Blue Laser and Light Emitting Diodes, Proceedings",
publisher = "Wiley-Blackwell",
address = "United States",
}