The role of sub-contact layers in the optimization of low-resistivity contacts to p-type GaN

J. Dennemarck, T. Bottcher, S. Figge, S. Einfeldt, R. Kroger, D. Hommel, E. Kaminska, W. Wiatroszak, A. Piotrowska

Research output: Book/ReportBook


The reduction of the resistivity of Pd/Au contacts on p-type GaN:Mg by the implementation of subcontact layers is investigated. First, a strained InGaN:Mg layer was used which is thought to reduce the Schottky barrier height in the presence of polarization fields. Second, a heavily doped GaN:Mg layer with maximized hole concentration was used as a sub-contact layer. In both cases, the specific contact resistance was decreased by about two orders of magnitude from 1 x 10(-3) Omega cm(2) to 1-2 x 10(-5) Omega cm(2) due to the increase of the free hole concentration in the subcontact layer.
Original languageUndefined/Unknown
Publication statusPublished - 2004

Publication series

Name5th International Symposium on Blue Laser and Light Emitting Diodes, Proceedings

Bibliographical note

Times Cited: 0 5th International Symposium on Blue Laser and Light Emitting Diodes MAR 15-19, 2004 Gyeongju, SOUTH KOREA Res Soc Wide gap Semicond; Korean Phys Soc; Off Naval Res; Korea Sci & Engn Fdn; Korea Res Fdn; Korea Assoc Photon Ind Dev; Asian Off Aerosp Res & Dev; Korea Photon Technol Inst

Cite this