@inbook{9fc0a89eab8e4f77917cbcd127f26a05,
title = "The role of the growth temperature for the SiN interlayer deposition in GaN",
abstract = "The application of SiN interlayers in GaN-based structures for the annihilation of threading dislocations captivates by its simplicity and the possibility to use it. However, since the metalorganic vapor phase epitaxy (MOVPE) of the group-III nitrides happens in a hydrogen-containing atmosphere, the surface decomposes during the SiN deposition. This work addresses the impact of the SiN growth with respect to temperature and surface dose. In particular, a quantitative analysis of the surface coverage is presented and the successive overgrowth with GaN is discussed in view of threading dislocation density and island growth mode. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
author = "T. Bottcher and J. Dennemarck and R. Kroger and S. Figge and D. Hommel",
note = "Times Cited: 7 ICNS-5 5th International Conference on Nitride Semiconductors (ICNS-5) MAY 25-30, 2003 NARA, JAPAN Japan Soc Appl Phys; Japan Soc Promot Sci, 162nd Comm Wide Bandgap Semiconductor Photon & Elect Devices; Japan Assoc Crystal Growth; Elect Soc",
year = "2003",
doi = "10.1002/pssc.200303370",
language = "Undefined/Unknown",
series = "Physica Status Solidi C-Current Topics in Solid State Physics",
pages = "2039--2042",
editor = "M. Stutzmann",
booktitle = "5th International Conference on Nitride Semiconductors",
}