The structure and growth direction of rare earth silicide nanowires on Si(100)

TY - JOUR

T1 - The structure and growth direction of rare earth silicide nanowires on Si(100)

AU - Eames, C.

AU - Probert, M. I. J.

AU - Tear, S. P.

PY - 2010/6/14

Y1 - 2010/6/14

N2 - The growth direction and the structure of rare earth silicide nanowires grown on the Si(100) surface have been calculated from first principles. The energies of the optimum structures show that a structure related to the tetragonal bulk phase is more favorable than the hexagonal model and that growth parallel to the dimer rows is lower in energy than growth across the dimer rows. (C) 2010 American Institute of Physics. [doi:10.1063/1.3453865]

AB - The growth direction and the structure of rare earth silicide nanowires grown on the Si(100) surface have been calculated from first principles. The energies of the optimum structures show that a structure related to the tetragonal bulk phase is more favorable than the hexagonal model and that growth parallel to the dimer rows is lower in energy than growth across the dimer rows. (C) 2010 American Institute of Physics. [doi:10.1063/1.3453865]

KW - ab initio calculations

KW - nanofabrication

KW - nanowires

KW - rare earth metals

UR - http://www.scopus.com/inward/record.url?scp=77953752118&partnerID=8YFLogxK

U2 - 10.1063/1.3453865

DO - 10.1063/1.3453865

M3 - Article

SN - 0003-6951

VL - 96

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241903

ER -