The use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-mu m picosecond laser diodes

GB Venus; A Gubenko; EL Portnoi; EA Avrutin; J Frahm; J Kubler; S Schelhase

The use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-mu m picosecond laser diodes

GB Venus, A Gubenko, EL Portnoi, EA Avrutin, J Frahm, J Kubler, S Schelhase

Electronic Engineering

Research output: Contribution to conference › Other

Original language	Undefined/Unknown
Pages	383-386
Publication status	Published - 1 Jun 2002

Cite this

@conference{64cc5d2ff50b4e6eb25906fbe660d383,

title = "The use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-mu m picosecond laser diodes",

author = "GB Venus and A Gubenko and EL Portnoi and EA Avrutin and J Frahm and J Kubler and S Schelhase",

year = "2002",

month = jun,

day = "1",

language = "Undefined/Unknown",

pages = "383--386",

}