Theory and modelling of the power conversion efficiency of large optical cavity laser diodes

Eugene A. Avrutin; Boris S. Ryvkin

doi:10.1109/HPD.2015.7439669

Theory and modelling of the power conversion efficiency of large optical cavity laser diodes

Eugene A. Avrutin, Boris S. Ryvkin

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Analytical and semi-analytical theory and numerical modelling of the major physical effects limiting the power conversion efficiency of semiconductor lasers at high injection currents are presented and overviewed. It is shown that the deterioration of output efficiency due to absorption by carriers in the Optical Confinement Layer is likely to be the main cause of efficiency degradation at high currents in most structures. Spatial Hole burning compounds this effect further; the effect of Two-Photon absorption is significant but somewhat less important in most structures.

Original language	English
Title of host publication	Proceedings of the 2015 High Power Diode Lasers and Systems Conference, HPD 2015 - Co-located with Photonex 2015
Publisher	IEEE
Pages	9-10
Number of pages	2
ISBN (Electronic)	9781467391788
DOIs	https://doi.org/10.1109/HPD.2015.7439669
Publication status	Published - 22 Mar 2016
Event	High Power Diode Lasers and Systems Conference, HPD 2015 - Coventry, United Kingdom Duration: 14 Oct 2015 → 15 Oct 2015

Conference

Conference	High Power Diode Lasers and Systems Conference, HPD 2015
Country/Territory	United Kingdom
City	Coventry
Period	14/10/15 → 15/10/15

Keywords

Efficiency
high power lasers
semiconductor lasers

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10.1109/HPD.2015.7439669

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title = "Theory and modelling of the power conversion efficiency of large optical cavity laser diodes",

abstract = "Analytical and semi-analytical theory and numerical modelling of the major physical effects limiting the power conversion efficiency of semiconductor lasers at high injection currents are presented and overviewed. It is shown that the deterioration of output efficiency due to absorption by carriers in the Optical Confinement Layer is likely to be the main cause of efficiency degradation at high currents in most structures. Spatial Hole burning compounds this effect further; the effect of Two-Photon absorption is significant but somewhat less important in most structures.",

keywords = "Efficiency, high power lasers, semiconductor lasers",

author = "Avrutin, {Eugene A.} and Ryvkin, {Boris S.}",

year = "2016",

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doi = "10.1109/HPD.2015.7439669",

language = "English",

pages = "9--10",

booktitle = "Proceedings of the 2015 High Power Diode Lasers and Systems Conference, HPD 2015 - Co-located with Photonex 2015",

publisher = "IEEE",

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note = "High Power Diode Lasers and Systems Conference, HPD 2015 ; Conference date: 14-10-2015 Through 15-10-2015",

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Avrutin, EA & Ryvkin, BS 2016, Theory and modelling of the power conversion efficiency of large optical cavity laser diodes. in Proceedings of the 2015 High Power Diode Lasers and Systems Conference, HPD 2015 - Co-located with Photonex 2015., 7439669, IEEE, pp. 9-10, High Power Diode Lasers and Systems Conference, HPD 2015, Coventry, United Kingdom, 14/10/15. https://doi.org/10.1109/HPD.2015.7439669

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T1 - Theory and modelling of the power conversion efficiency of large optical cavity laser diodes

AU - Avrutin, Eugene A.

AU - Ryvkin, Boris S.

PY - 2016/3/22

Y1 - 2016/3/22

N2 - Analytical and semi-analytical theory and numerical modelling of the major physical effects limiting the power conversion efficiency of semiconductor lasers at high injection currents are presented and overviewed. It is shown that the deterioration of output efficiency due to absorption by carriers in the Optical Confinement Layer is likely to be the main cause of efficiency degradation at high currents in most structures. Spatial Hole burning compounds this effect further; the effect of Two-Photon absorption is significant but somewhat less important in most structures.

AB - Analytical and semi-analytical theory and numerical modelling of the major physical effects limiting the power conversion efficiency of semiconductor lasers at high injection currents are presented and overviewed. It is shown that the deterioration of output efficiency due to absorption by carriers in the Optical Confinement Layer is likely to be the main cause of efficiency degradation at high currents in most structures. Spatial Hole burning compounds this effect further; the effect of Two-Photon absorption is significant but somewhat less important in most structures.

KW - Efficiency

KW - high power lasers

KW - semiconductor lasers

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U2 - 10.1109/HPD.2015.7439669

DO - 10.1109/HPD.2015.7439669

M3 - Conference contribution

AN - SCOPUS:84968560802

SP - 9

EP - 10

BT - Proceedings of the 2015 High Power Diode Lasers and Systems Conference, HPD 2015 - Co-located with Photonex 2015

PB - IEEE

T2 - High Power Diode Lasers and Systems Conference, HPD 2015

Y2 - 14 October 2015 through 15 October 2015

ER -

Theory and modelling of the power conversion efficiency of large optical cavity laser diodes

Abstract

Conference

Keywords

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