Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

B. S. Ryvkin; Evgeny Avrutin

doi:10.1007/s11082-023-04887-6

Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

B. S. Ryvkin, Evgeny Avrutin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.

Original language	English
Article number	640
Pages (from-to)	639-640
Number of pages	11
Journal	Optical and quantum electronics
Volume	55
DOIs	https://doi.org/10.1007/s11082-023-04887-6
Publication status	Published - 23 May 2023

Bibliographical note

Keywords

Semiconductor lasers
AlGaInP
Double heterostructure
Electron leakage
Internal efciency

Access to Document

10.1007/s11082-023-04887-6Licence: CC BY

s11082-023-04887-6
© The Author(s) 2023
Final published version, 1.06 MBLicence: CC BY

Cite this

@article{0ef6fe06121b4222aca1a7031b2ac6d4,

title = "Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation",

abstract = "Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.",

keywords = "Semiconductor lasers, AlGaInP, Double heterostructure, Electron leakage, Internal efciency",

author = "Ryvkin, {B. S.} and Evgeny Avrutin",

note = "{\textcopyright} The Author(s) 2023",

year = "2023",

month = may,

day = "23",

doi = "10.1007/s11082-023-04887-6",

language = "English",

volume = "55",

pages = "639--640",

journal = "Optical and quantum electronics",

issn = "0306-8919",

publisher = "Springer",

}

TY - JOUR

T1 - Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

AU - Ryvkin, B. S.

AU - Avrutin, Evgeny

N1 - © The Author(s) 2023

PY - 2023/5/23

Y1 - 2023/5/23

N2 - Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.

AB - Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.

KW - Semiconductor lasers

KW - AlGaInP

KW - Double heterostructure

KW - Electron leakage

KW - Internal efciency

U2 - 10.1007/s11082-023-04887-6

DO - 10.1007/s11082-023-04887-6

M3 - Article

SN - 0306-8919

VL - 55

SP - 639

EP - 640

JO - Optical and quantum electronics

JF - Optical and quantum electronics

M1 - 640

ER -