Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

B. S. Ryvkin, Evgeny Avrutin

Research output: Contribution to journalArticlepeer-review


Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.
Original languageEnglish
Article number640
Pages (from-to)639-640
Number of pages11
JournalOptical and quantum electronics
Publication statusPublished - 23 May 2023

Bibliographical note

© The Author(s) 2023


  • Semiconductor lasers
  • AlGaInP
  • Double heterostructure
  • Electron leakage
  • Internal efciency

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