Towards MnN as a replacement for IrMn

William James Frost; Fatimah Alsaud; Robert Anthony Lawrence; Matt Probert; Gonzalo Vallejo Fernandez

doi:10.1038/s41598-024-72886-y

Towards MnN as a replacement for IrMn

William James Frost, Fatimah Alsaud, Robert Anthony Lawrence, Matt Probert, Gonzalo Vallejo Fernandez^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

There is an urgent need to identify new antiferromagnetic materials that offer a replacement for IrMn alloys for room temperature and above applications. This is driven by the scarcity and high cost of Ir. Recently, MnN with {002} texture grown on a Ta seed layer has been proposed as a cost-effective alternative. However, two key issues need to be addressed before this material can be considered a realistic alternative to IrMn: thick layers of approximately 30 nm are required due to its relatively low magnetocrystalline anisotropy and nitrogen diffusion into the Ta layer at relatively low temperatures results in poor temperature performance. In this work, we show a potential pathway to overcome these issues. By using a W rather than a Ta seed layer, N diffusion is minimized, if not eliminated, at temperatures exceeding 300ºC. Furthermore, preferential {111} growth is achieved and a significantly enhanced anisotropy, 2.6x10⁶ erg/cm³, has been measured. This value is almost identical to that measured for 3D randomly oriented IrMn.

Original language	English
Article number	21944
Number of pages	8
Journal	Scientific Reports
Volume	14
DOIs	https://doi.org/10.1038/s41598-024-72886-y
Publication status	Published - 20 Sept 2024

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Cite this

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title = "Towards MnN as a replacement for IrMn",

abstract = "There is an urgent need to identify new antiferromagnetic materials that offer a replacement for IrMn alloys for room temperature and above applications. This is driven by the scarcity and high cost of Ir. Recently, MnN with {002} texture grown on a Ta seed layer has been proposed as a cost-effective alternative. However, two key issues need to be addressed before this material can be considered a realistic alternative to IrMn: thick layers of approximately 30 nm are required due to its relatively low magnetocrystalline anisotropy and nitrogen diffusion into the Ta layer at relatively low temperatures results in poor temperature performance. In this work, we show a potential pathway to overcome these issues. By using a W rather than a Ta seed layer, N diffusion is minimized, if not eliminated, at temperatures exceeding 300ºC. Furthermore, preferential {111} growth is achieved and a significantly enhanced anisotropy, 2.6x106 erg/cm3, has been measured. This value is almost identical to that measured for 3D randomly oriented IrMn. ",

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T1 - Towards MnN as a replacement for IrMn

AU - Frost, William James

AU - Alsaud, Fatimah

AU - Lawrence, Robert Anthony

AU - Probert, Matt

AU - Vallejo Fernandez, Gonzalo

PY - 2024/9/20

Y1 - 2024/9/20

N2 - There is an urgent need to identify new antiferromagnetic materials that offer a replacement for IrMn alloys for room temperature and above applications. This is driven by the scarcity and high cost of Ir. Recently, MnN with {002} texture grown on a Ta seed layer has been proposed as a cost-effective alternative. However, two key issues need to be addressed before this material can be considered a realistic alternative to IrMn: thick layers of approximately 30 nm are required due to its relatively low magnetocrystalline anisotropy and nitrogen diffusion into the Ta layer at relatively low temperatures results in poor temperature performance. In this work, we show a potential pathway to overcome these issues. By using a W rather than a Ta seed layer, N diffusion is minimized, if not eliminated, at temperatures exceeding 300ºC. Furthermore, preferential {111} growth is achieved and a significantly enhanced anisotropy, 2.6x106 erg/cm3, has been measured. This value is almost identical to that measured for 3D randomly oriented IrMn.

AB - There is an urgent need to identify new antiferromagnetic materials that offer a replacement for IrMn alloys for room temperature and above applications. This is driven by the scarcity and high cost of Ir. Recently, MnN with {002} texture grown on a Ta seed layer has been proposed as a cost-effective alternative. However, two key issues need to be addressed before this material can be considered a realistic alternative to IrMn: thick layers of approximately 30 nm are required due to its relatively low magnetocrystalline anisotropy and nitrogen diffusion into the Ta layer at relatively low temperatures results in poor temperature performance. In this work, we show a potential pathway to overcome these issues. By using a W rather than a Ta seed layer, N diffusion is minimized, if not eliminated, at temperatures exceeding 300ºC. Furthermore, preferential {111} growth is achieved and a significantly enhanced anisotropy, 2.6x106 erg/cm3, has been measured. This value is almost identical to that measured for 3D randomly oriented IrMn.

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