Tunnel barrier fabrication on Si and its impact on a spin transistor

C L Dennis, C V Tiusan, R A Ferreira, J F Gregg, G J Ensell, S M Thompson, P P Freitas

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The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. © 2004 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)1383-1386
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - Apr 2005


  • spintronics
  • tunnel barriers on Si
  • spin injection
  • spin transistor

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