Tunnel barrier fabrication on Si and its impact on a spin transistor

C L Dennis; C V Tiusan; R A Ferreira; J F Gregg; G J Ensell; S M Thompson; P P Freitas

doi:10.1016/j.jmmm.2004.11.443

Tunnel barrier fabrication on Si and its impact on a spin transistor

C L Dennis, C V Tiusan, R A Ferreira, J F Gregg, G J Ensell, S M Thompson, P P Freitas

Research output: Contribution to journal › Article › peer-review

Abstract

The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. &COPY; 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1383-1386
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	290
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.443
Publication status	Published - Apr 2005

Keywords

spintronics
tunnel barriers on Si
spin injection
spin transistor
MAGNETORESISTANCE
INJECTION

Access to Document

10.1016/j.jmmm.2004.11.443

Cite this

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title = "Tunnel barrier fabrication on Si and its impact on a spin transistor",

abstract = "The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. &COPY; 2004 Elsevier B.V. All rights reserved.",

keywords = "spintronics, tunnel barriers on Si, spin injection, spin transistor, MAGNETORESISTANCE, INJECTION",

author = "Dennis, {C L} and Tiusan, {C V} and Ferreira, {R A} and Gregg, {J F} and Ensell, {G J} and Thompson, {S M} and Freitas, {P P}",

year = "2005",

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language = "English",

volume = "290",

pages = "1383--1386",

journal = "Journal of Magnetism and Magnetic Materials",

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T1 - Tunnel barrier fabrication on Si and its impact on a spin transistor

AU - Dennis, C L

AU - Tiusan, C V

AU - Ferreira, R A

AU - Gregg, J F

AU - Ensell, G J

AU - Thompson, S M

AU - Freitas, P P

PY - 2005/4

Y1 - 2005/4

N2 - The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. &COPY; 2004 Elsevier B.V. All rights reserved.

AB - The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. &COPY; 2004 Elsevier B.V. All rights reserved.

KW - spintronics

KW - tunnel barriers on Si

KW - spin injection

KW - spin transistor

KW - MAGNETORESISTANCE

KW - INJECTION

U2 - 10.1016/j.jmmm.2004.11.443

DO - 10.1016/j.jmmm.2004.11.443

M3 - Article

SN - 0304-8853

VL - 290

SP - 1383

EP - 1386

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -