By the same authors

Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion

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Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion. / Ichinose, Tomohiro; Elphick, Kelvin; Hirohata, Atsufumi; Mizukami, Shigemi.

In: ACS Applied Electronic Materials, Vol. 1, No. 2220, 15.10.2019.

Research output: Contribution to journalArticlepeer-review

Harvard

Ichinose, T, Elphick, K, Hirohata, A & Mizukami, S 2019, 'Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion', ACS Applied Electronic Materials, vol. 1, no. 2220. https://doi.org/10.1021/acsaelm.9b00431

APA

Ichinose, T., Elphick, K., Hirohata, A., & Mizukami, S. (2019). Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion. ACS Applied Electronic Materials, 1(2220). https://doi.org/10.1021/acsaelm.9b00431

Vancouver

Ichinose T, Elphick K, Hirohata A, Mizukami S. Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion. ACS Applied Electronic Materials. 2019 Oct 15;1(2220). https://doi.org/10.1021/acsaelm.9b00431

Author

Ichinose, Tomohiro ; Elphick, Kelvin ; Hirohata, Atsufumi ; Mizukami, Shigemi. / Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion. In: ACS Applied Electronic Materials. 2019 ; Vol. 1, No. 2220.

Bibtex - Download

@article{af96465a23a04c7dad1248856b09ee92,
title = "Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion",
abstract = "Sputtering is the method widely used to fabricate thin films including nitrides in spintronic research fields. One of the issues to fabricate the nitride thin films via sputtering is the control of N deficiency. In this work, it was demonstrated that the use of atomic diffusion improved the insulating property of amorphous BN (a-BN): BN deposition caused the nitridation of Co underlayer, and the diffusion of N from Co−N into BN reduced the N deficiency of BN. The a-BN formed via this sequence showed flat interfaces and no pinholes and could be used as a tunneling barrier layer. This provides an insight into synthesizing stoichiometric BN thin films. A negative tunnel magnetoresistance (TMR) ratio of −0.2% was observed at room temperature. The TMR ratio increased with a decrease in temperature to −0.7% at 10 K. The effective thickness and height of the barrier were estimated to be 1.78 nm and 0.52 eV, respectively, for 2 nm thick BN-MTJs based on the dependences of transport properties on the bias voltage and temperature.",
author = "Tomohiro Ichinose and Kelvin Elphick and Atsufumi Hirohata and Shigemi Mizukami",
note = "{\textcopyright} 2019 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher{\textquoteright}s self-archiving policy. Further copying may not be permitted; contact the publisher for details.",
year = "2019",
month = oct,
day = "15",
doi = "10.1021/acsaelm.9b00431",
language = "English",
volume = "1",
journal = "ACS Applied Electronic Materials",
number = "2220",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion

AU - Ichinose, Tomohiro

AU - Elphick, Kelvin

AU - Hirohata, Atsufumi

AU - Mizukami, Shigemi

N1 - © 2019 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

PY - 2019/10/15

Y1 - 2019/10/15

N2 - Sputtering is the method widely used to fabricate thin films including nitrides in spintronic research fields. One of the issues to fabricate the nitride thin films via sputtering is the control of N deficiency. In this work, it was demonstrated that the use of atomic diffusion improved the insulating property of amorphous BN (a-BN): BN deposition caused the nitridation of Co underlayer, and the diffusion of N from Co−N into BN reduced the N deficiency of BN. The a-BN formed via this sequence showed flat interfaces and no pinholes and could be used as a tunneling barrier layer. This provides an insight into synthesizing stoichiometric BN thin films. A negative tunnel magnetoresistance (TMR) ratio of −0.2% was observed at room temperature. The TMR ratio increased with a decrease in temperature to −0.7% at 10 K. The effective thickness and height of the barrier were estimated to be 1.78 nm and 0.52 eV, respectively, for 2 nm thick BN-MTJs based on the dependences of transport properties on the bias voltage and temperature.

AB - Sputtering is the method widely used to fabricate thin films including nitrides in spintronic research fields. One of the issues to fabricate the nitride thin films via sputtering is the control of N deficiency. In this work, it was demonstrated that the use of atomic diffusion improved the insulating property of amorphous BN (a-BN): BN deposition caused the nitridation of Co underlayer, and the diffusion of N from Co−N into BN reduced the N deficiency of BN. The a-BN formed via this sequence showed flat interfaces and no pinholes and could be used as a tunneling barrier layer. This provides an insight into synthesizing stoichiometric BN thin films. A negative tunnel magnetoresistance (TMR) ratio of −0.2% was observed at room temperature. The TMR ratio increased with a decrease in temperature to −0.7% at 10 K. The effective thickness and height of the barrier were estimated to be 1.78 nm and 0.52 eV, respectively, for 2 nm thick BN-MTJs based on the dependences of transport properties on the bias voltage and temperature.

U2 - 10.1021/acsaelm.9b00431

DO - 10.1021/acsaelm.9b00431

M3 - Article

VL - 1

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 2220

ER -