Tunneling escape time from a semiconductor quantum well in an electric field

I. A. Larkin; Sebastian Ujevic; E. A. Avrutin

doi:10.1063/1.3259414

Tunneling escape time from a semiconductor quantum well in an electric field

I. A. Larkin, Sebastian Ujevic, E. A. Avrutin

Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We calculate the tunneling escape times of quasibound states in a quantum well under applied electric field. We refine the quasiclassical Wentzel-Kramers-Brillouin approximation for a multilayer heterostructure and find a simple analytical expression for the lifetime, which takes into account different effective masses and different dielectric constants inside the heterostructure layers. We compare the quasiclassical lifetime formula with exact numerical solutions of the (complex) Schroumldinger equation. For the underbarrier action S-ab >= h/3, good agreement between the two approaches is demonstrated. Also, by analytical expansion of the Schroumldinger equation we prove the quasiclassical formula for lifetime as an asymptotic limit of the exact solution.

Original language	English
Article number	113701
Pages (from-to)	-
Number of pages	7
Journal	Journal of Applied Physics
Volume	106
Issue number	11
DOIs	https://doi.org/10.1063/1.3259414
Publication status	Published - 1 Dec 2009

Keywords

effective mass
gallium arsenide
III-V semiconductors
multilayers
permittivity
Schrodinger equation
semiconductor heterojunctions
semiconductor quantum wells
tunnelling
FALSE VACUUM
ELECTROABSORPTION
SYSTEMS
STATES
FATE

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@article{7f91f511079a4ae389f90169fecf8cd3,

title = "Tunneling escape time from a semiconductor quantum well in an electric field",

abstract = "We calculate the tunneling escape times of quasibound states in a quantum well under applied electric field. We refine the quasiclassical Wentzel-Kramers-Brillouin approximation for a multilayer heterostructure and find a simple analytical expression for the lifetime, which takes into account different effective masses and different dielectric constants inside the heterostructure layers. We compare the quasiclassical lifetime formula with exact numerical solutions of the (complex) Schroumldinger equation. For the underbarrier action S-ab >= h/3, good agreement between the two approaches is demonstrated. Also, by analytical expansion of the Schroumldinger equation we prove the quasiclassical formula for lifetime as an asymptotic limit of the exact solution.",

keywords = "effective mass, gallium arsenide, III-V semiconductors, multilayers, permittivity, Schrodinger equation, semiconductor heterojunctions, semiconductor quantum wells, tunnelling, FALSE VACUUM, ELECTROABSORPTION, SYSTEMS, STATES, FATE",

author = "Larkin, {I. A.} and Sebastian Ujevic and Avrutin, {E. A.}",

year = "2009",

month = dec,

day = "1",

doi = "10.1063/1.3259414",

language = "English",

volume = "106",

pages = "--",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Tunneling escape time from a semiconductor quantum well in an electric field

AU - Larkin, I. A.

AU - Ujevic, Sebastian

AU - Avrutin, E. A.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We calculate the tunneling escape times of quasibound states in a quantum well under applied electric field. We refine the quasiclassical Wentzel-Kramers-Brillouin approximation for a multilayer heterostructure and find a simple analytical expression for the lifetime, which takes into account different effective masses and different dielectric constants inside the heterostructure layers. We compare the quasiclassical lifetime formula with exact numerical solutions of the (complex) Schroumldinger equation. For the underbarrier action S-ab >= h/3, good agreement between the two approaches is demonstrated. Also, by analytical expansion of the Schroumldinger equation we prove the quasiclassical formula for lifetime as an asymptotic limit of the exact solution.

AB - We calculate the tunneling escape times of quasibound states in a quantum well under applied electric field. We refine the quasiclassical Wentzel-Kramers-Brillouin approximation for a multilayer heterostructure and find a simple analytical expression for the lifetime, which takes into account different effective masses and different dielectric constants inside the heterostructure layers. We compare the quasiclassical lifetime formula with exact numerical solutions of the (complex) Schroumldinger equation. For the underbarrier action S-ab >= h/3, good agreement between the two approaches is demonstrated. Also, by analytical expansion of the Schroumldinger equation we prove the quasiclassical formula for lifetime as an asymptotic limit of the exact solution.

KW - effective mass

KW - gallium arsenide

KW - III-V semiconductors

KW - multilayers

KW - permittivity

KW - Schrodinger equation

KW - semiconductor heterojunctions

KW - semiconductor quantum wells

KW - tunnelling

KW - FALSE VACUUM

KW - ELECTROABSORPTION

KW - SYSTEMS

KW - STATES

KW - FATE

UR - http://www.scopus.com/inward/record.url?scp=72449200652&partnerID=8YFLogxK

U2 - 10.1063/1.3259414

DO - 10.1063/1.3259414

M3 - Article

VL - 106

SP - -

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113701

ER -

Tunneling escape time from a semiconductor quantum well in an electric field

Abstract

Keywords

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