Tunneling Magnetoresistance

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Magnetic tunnel junctions are one of the key elements for spintronic devices, including magnetic recording, memories, and sensors. The performance of the junctions is defined by a tunneling magnetoresistance ratio and a resistance area product. These performance indicators have been increasing over the last decades. This section reviews the development and associated phenomena using spin-dependent tunneling.
Original languageEnglish
Title of host publicationReference Module in Materials Science and Materials Engineering
PublisherElsevier
DOIs
Publication statusPublished - 24 Sept 2022

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