Magnetic tunnel junctions are one of the key elements for spintronic devices, including magnetic recording, memories, and sensors. The performance of the junctions is defined by a tunneling magnetoresistance ratio and a resistance area product. These performance indicators have been increasing over the last decades. This section reviews the development and associated phenomena using spin-dependent tunneling.
|Title of host publication
|Reference Module in Materials Science and Materials Engineering
|Published - 24 Sept 2022