Ultrafast electron dynamics in GeSi nanostructures

TY - JOUR

T1 - Ultrafast electron dynamics in GeSi nanostructures

AU - Cavill, S.A.

AU - Potenza, A.

AU - Dhesi, S.S.

PY - 2012/1/17

Y1 - 2012/1/17

N2 - The relaxation dynamics of photoexcited hot carriers in Ge x Si 1−x islands grown on Si(111)-(7×7) have been studied with the spatial and temporal resolution of time-resolved two-photon photoemission electron microscopy. The relaxation dynamics of the excited electronic states within the Ge-rich Ge x Si 1−x dots and the surrounding Si-rich wetting layer are found to vary significantly below the conduction-band minimum. These differences are ascribed to faster hot-carrier-diffusion rates for the islands compared to those for the wetting layer.

AB - The relaxation dynamics of photoexcited hot carriers in Ge x Si 1−x islands grown on Si(111)-(7×7) have been studied with the spatial and temporal resolution of time-resolved two-photon photoemission electron microscopy. The relaxation dynamics of the excited electronic states within the Ge-rich Ge x Si 1−x dots and the surrounding Si-rich wetting layer are found to vary significantly below the conduction-band minimum. These differences are ascribed to faster hot-carrier-diffusion rates for the islands compared to those for the wetting layer.

UR - http://www.scopus.com/inward/record.url?scp=84856450802&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.035421

DO - 10.1103/PhysRevB.85.035421

M3 - Article

AN - SCOPUS:84856450802

SN - 1098-0121

VL - 85

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 3

M1 - 035421

ER -