Ultraviolet Photodetector Based on Mg0.67Ni0.33O Thin Film on SrTiO3

Fahrettin Sarcan; Sam Orchard; Balati Kuerbanjiang; Aleksandar Skeparovski; Vlado K. Lazarov; Ayse Erol

doi:10.1002/pssr.202000175

Ultraviolet Photodetector Based on Mg_0.67Ni_0.33O Thin Film on SrTiO₃

Fahrettin Sarcan^*, Sam Orchard, Balati Kuerbanjiang, Aleksandar Skeparovski, Vlado K. Lazarov, Ayse Erol

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Herein, a new heterostructured ultraviolet metal–semiconductor–metal photodetector based on Mg_0.67Ni_0.33O thin film and SrTiO₃ is reported. The metal–semiconductor–metal photodetector comprises a 22 nm epilayer of Mg_0.67Ni_0.33O grown on SrTiO₃ (111) substrate by molecular beam epitaxy. A comparison of responsivities of the Mg_0.67Ni_0.33O–SrTiO₃ photodetector and reference SrTiO₃ photodetector shows that the heterostructured detector has close to an order of magnitude enhanced responsivity in the deep-ultraviolet region. The responsivity of the Mg_0.67Ni_0.33–SrTiO₃-based photodetector at 320 nm is 415 mA W⁻¹, with dark current lower than 40 pA at a bias of 10 V. The rise and fall times of Mg_0.67Ni_0.33O–SrTiO₃ photodetector are 10.7 and 8.6 ms, respectively, with the rise time more than two orders of magnitude shorter than the reference SrTiO₃ photodetector.

Original language	English
Article number	2000175
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Early online date	13 May 2020
DOIs	https://doi.org/10.1002/pssr.202000175
Publication status	E-pub ahead of print - 13 May 2020

Bibliographical note

© 2020 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.

Keywords

deep ultraviolet
MgNiO
SrTiO
thin films
ultraviolet photodetectors

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10.1002/pssr.202000175

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© 2020 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details.
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Cite this

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title = "Ultraviolet Photodetector Based on Mg0.67Ni0.33O Thin Film on SrTiO3",

abstract = "Herein, a new heterostructured ultraviolet metal–semiconductor–metal photodetector based on Mg0.67Ni0.33O thin film and SrTiO3 is reported. The metal–semiconductor–metal photodetector comprises a 22 nm epilayer of Mg0.67Ni0.33O grown on SrTiO3 (111) substrate by molecular beam epitaxy. A comparison of responsivities of the Mg0.67Ni0.33O–SrTiO3 photodetector and reference SrTiO3 photodetector shows that the heterostructured detector has close to an order of magnitude enhanced responsivity in the deep-ultraviolet region. The responsivity of the Mg0.67Ni0.33–SrTiO3-based photodetector at 320 nm is 415 mA W−1, with dark current lower than 40 pA at a bias of 10 V. The rise and fall times of Mg0.67Ni0.33O–SrTiO3 photodetector are 10.7 and 8.6 ms, respectively, with the rise time more than two orders of magnitude shorter than the reference SrTiO3 photodetector.",

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AU - Sarcan, Fahrettin

AU - Orchard, Sam

AU - Kuerbanjiang, Balati

AU - Skeparovski, Aleksandar

AU - Lazarov, Vlado K.

AU - Erol, Ayse

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PY - 2020/5/13

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N2 - Herein, a new heterostructured ultraviolet metal–semiconductor–metal photodetector based on Mg0.67Ni0.33O thin film and SrTiO3 is reported. The metal–semiconductor–metal photodetector comprises a 22 nm epilayer of Mg0.67Ni0.33O grown on SrTiO3 (111) substrate by molecular beam epitaxy. A comparison of responsivities of the Mg0.67Ni0.33O–SrTiO3 photodetector and reference SrTiO3 photodetector shows that the heterostructured detector has close to an order of magnitude enhanced responsivity in the deep-ultraviolet region. The responsivity of the Mg0.67Ni0.33–SrTiO3-based photodetector at 320 nm is 415 mA W−1, with dark current lower than 40 pA at a bias of 10 V. The rise and fall times of Mg0.67Ni0.33O–SrTiO3 photodetector are 10.7 and 8.6 ms, respectively, with the rise time more than two orders of magnitude shorter than the reference SrTiO3 photodetector.

AB - Herein, a new heterostructured ultraviolet metal–semiconductor–metal photodetector based on Mg0.67Ni0.33O thin film and SrTiO3 is reported. The metal–semiconductor–metal photodetector comprises a 22 nm epilayer of Mg0.67Ni0.33O grown on SrTiO3 (111) substrate by molecular beam epitaxy. A comparison of responsivities of the Mg0.67Ni0.33O–SrTiO3 photodetector and reference SrTiO3 photodetector shows that the heterostructured detector has close to an order of magnitude enhanced responsivity in the deep-ultraviolet region. The responsivity of the Mg0.67Ni0.33–SrTiO3-based photodetector at 320 nm is 415 mA W−1, with dark current lower than 40 pA at a bias of 10 V. The rise and fall times of Mg0.67Ni0.33O–SrTiO3 photodetector are 10.7 and 8.6 ms, respectively, with the rise time more than two orders of magnitude shorter than the reference SrTiO3 photodetector.

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