Use of the Franz-Keldysh effect in self-biased p-i-n-heterostructures for saturable absorber mirrors

TY - JOUR

T1 - Use of the Franz-Keldysh effect in self-biased p-i-n-heterostructures for saturable absorber mirrors

AU - Ryvkin, B. S.

AU - Avrutin, E. A.

AU - Panajotov, K.

PY - 2009/2

Y1 - 2009/2

N2 - The effects of the material properties and the resonator enhancement of absorption on the performance of a semiconductor saturable absorber mirror (SESAM) utilizing the Franz-Keldysh effect are analyzed theoretically. Bulk as well as extremely shallow quantum well materials are shown to be suitable for fabrication of devices of this type. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses, as well as the thermal properties, are shown to compare favorably with existing all-optical SESAM constructions.

AB - The effects of the material properties and the resonator enhancement of absorption on the performance of a semiconductor saturable absorber mirror (SESAM) utilizing the Franz-Keldysh effect are analyzed theoretically. Bulk as well as extremely shallow quantum well materials are shown to be suitable for fabrication of devices of this type. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses, as well as the thermal properties, are shown to compare favorably with existing all-optical SESAM constructions.

KW - EMITTING SEMICONDUCTOR-LASERS

KW - SHALLOW QUANTUM-WELLS

KW - OPTIC EFFECT DEVICES

KW - MODE-LOCKING

KW - BISTABILITY

KW - FIELD

UR - http://www.scopus.com/inward/record.url?scp=64249166799&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/24/2/025001

DO - 10.1088/0268-1242/24/2/025001

M3 - Article

SN - 0268-1242

VL - 24

SP - -

JO - Semiconductor science and technology

JF - Semiconductor science and technology

IS - 2

M1 - 025001

ER -