Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films

S. M. Thompson, V. K. Lazarov, R. C. Bradley, T. Deakin, B. Kaeswurm, G. E. Sterbinsky, J. Cheng, B. W. Wessels, Vlado Lazarov

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The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film (C) 2010 American Institute of Physics. [doi:10.1063/1.3350911]

Original languageEnglish
Article number09B102
Number of pages3
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 1 May 2010

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