Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films

S. M. Thompson; V. K. Lazarov; R. C. Bradley; T. Deakin; B. Kaeswurm; G. E. Sterbinsky; J. Cheng; B. W. Wessels; Vlado Lazarov

doi:10.1063/1.3350911

Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films

S. M. Thompson, V. K. Lazarov, R. C. Bradley, T. Deakin, B. Kaeswurm, G. E. Sterbinsky, J. Cheng, B. W. Wessels, Vlado Lazarov

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film (C) 2010 American Institute of Physics. [doi:10.1063/1.3350911]

Original language	English
Article number	09B102
Number of pages	3
Journal	Journal of Applied Physics
Volume	107
Issue number	9
DOIs	https://doi.org/10.1063/1.3350911
Publication status	Published - 1 May 2010

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title = "Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films",

abstract = "The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film (C) 2010 American Institute of Physics. [doi:10.1063/1.3350911]",

author = "Thompson, {S. M.} and Lazarov, {V. K.} and Bradley, {R. C.} and T. Deakin and B. Kaeswurm and Sterbinsky, {G. E.} and J. Cheng and Wessels, {B. W.} and Vlado Lazarov",

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T1 - Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films

AU - Thompson, S. M.

AU - Lazarov, V. K.

AU - Bradley, R. C.

AU - Deakin, T.

AU - Kaeswurm, B.

AU - Sterbinsky, G. E.

AU - Cheng, J.

AU - Wessels, B. W.

AU - Lazarov, Vlado

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film (C) 2010 American Institute of Physics. [doi:10.1063/1.3350911]

AB - The infrared magnetorefractive effect (MRE) is used to compare the magnetoresistance (MR) in epitaxial thin films of Fe3O4 grown on MgO with (100) and (111) crystal orientations. The smaller MRE detected in the (111) film is shown to correlate with the smaller electrically measured MR, its behavior consistent with a lower density of antiphase boundaries in the (111) film (C) 2010 American Institute of Physics. [doi:10.1063/1.3350911]

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JF - Journal of Applied Physics

IS - 9

M1 - 09B102

ER -

Using the infrared magnetorefractive effect to compare the magnetoresistance in (100) and (111) oriented Fe3O4 films

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