Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Arsham Ghasemi; Demie Kepaptsoglou; Pedro L. Galindo; Quentin Ramasse; T Hesjedal; Vlado Lazarov

doi:10.1038/am.2017.111

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Arsham Ghasemi, Demie Kepaptsoglou, Pedro L. Galindo, Quentin Ramasse, T Hesjedal, Vlado Lazarov

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.

Original language	English
Article number	e402
Number of pages	5
Journal	NPG Asia Materials
Volume	9
Issue number	e402
Early online date	1 Jul 2017
DOIs	https://doi.org/10.1038/am.2017.111 https://doi.org/10.1038/am.2017.111
Publication status	Published - 7 Jul 2017

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Cite this

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title = "Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3",

abstract = "We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.",

author = "Arsham Ghasemi and Demie Kepaptsoglou and Galindo, {Pedro L.} and Quentin Ramasse and T Hesjedal and Vlado Lazarov",

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T1 - Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

AU - Ghasemi, Arsham

AU - Kepaptsoglou, Demie

AU - Galindo, Pedro L.

AU - Ramasse, Quentin

AU - Hesjedal, T

AU - Lazarov, Vlado

PY - 2017/7/7

Y1 - 2017/7/7

N2 - We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.

AB - We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.

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ER -

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Abstract

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