Very low energy electron microscopy of doped semiconductors

M M El-Gomati; T C R Wells

Very low energy electron microscopy of doped semiconductors

Electronic Engineering

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Abstract

Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (E-P) as low as 15 eV. The doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) on n-type silicon (similar to 10(15) cm(-3)) show distinct contrast with electron energies of about 3 keV. The brightest region is n(+) followed by p(+), then the n-type substrate. The highest contrast for the p(+) and n(+) type regions is reached at about E-P=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. (C) 2001 American Institute of Physics.

Original language	English
Pages (from-to)	2931-2933
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	18
Publication status	Published - 29 Oct 2001

Cite this

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title = "Very low energy electron microscopy of doped semiconductors",

abstract = "Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (E-P) as low as 15 eV. The doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) on n-type silicon (similar to 10(15) cm(-3)) show distinct contrast with electron energies of about 3 keV. The brightest region is n(+) followed by p(+), then the n-type substrate. The highest contrast for the p(+) and n(+) type regions is reached at about E-P=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. (C) 2001 American Institute of Physics.",

author = "El-Gomati, {M M} and Wells, {T C R}",

year = "2001",

month = oct,

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language = "English",

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pages = "2931--2933",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Very low energy electron microscopy of doped semiconductors

AU - El-Gomati, M M

AU - Wells, T C R

PY - 2001/10/29

Y1 - 2001/10/29

N2 - Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (E-P) as low as 15 eV. The doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) on n-type silicon (similar to 10(15) cm(-3)) show distinct contrast with electron energies of about 3 keV. The brightest region is n(+) followed by p(+), then the n-type substrate. The highest contrast for the p(+) and n(+) type regions is reached at about E-P=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. (C) 2001 American Institute of Physics.

AB - Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (E-P) as low as 15 eV. The doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) on n-type silicon (similar to 10(15) cm(-3)) show distinct contrast with electron energies of about 3 keV. The brightest region is n(+) followed by p(+), then the n-type substrate. The highest contrast for the p(+) and n(+) type regions is reached at about E-P=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. (C) 2001 American Institute of Physics.

M3 - Article

VL - 79

SP - 2931

EP - 2933

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -