Very low energy electron microscopy of doped semiconductors

M M El-Gomati; T C R Wells; H Jayakody

Very low energy electron microscopy of doped semiconductors

M M El-Gomati, T C R Wells, H Jayakody

Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Very low energy electron microscopy in the range 1-5,000 eV has been used to image doped silicon regions in silicon. The contrast between the n-type and doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) appears at electron energies of similar to 3 keV. The n(+) region is brightest followed by the p(+) then the n-type substrate. The highest contrast between the different regions is achieved below 500 eV. Analysis by Auger spectroscopy revealed a surface layer of graphitic carbon. The contrast mechanism is explained in terms of metal-semiconductor contacts.

Original language	English
Title of host publication	MICROSCOPY OF SEMICONDUCTING MATERIALS 2001
Editors	AG Cullis, JL Hutchison
Place of Publication	BRISTOL
Publisher	IOP Publishing
Pages	435-438
Number of pages	4
ISBN (Print)	0-7503-0818-4
Publication status	Published - 2001
Event	Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials - OXFORD Duration: 25 Mar 2001 → 29 Mar 2001

Conference

Conference	Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
City	OXFORD
Period	25/03/01 → 29/03/01

Cite this

@inproceedings{588eb87d8e1a47a198710ef3d94e8e10,

title = "Very low energy electron microscopy of doped semiconductors",

abstract = "Very low energy electron microscopy in the range 1-5,000 eV has been used to image doped silicon regions in silicon. The contrast between the n-type and doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) appears at electron energies of similar to 3 keV. The n(+) region is brightest followed by the p(+) then the n-type substrate. The highest contrast between the different regions is achieved below 500 eV. Analysis by Auger spectroscopy revealed a surface layer of graphitic carbon. The contrast mechanism is explained in terms of metal-semiconductor contacts.",

author = "El-Gomati, {M M} and Wells, {T C R} and H Jayakody",

year = "2001",

language = "English",

isbn = "0-7503-0818-4",

pages = "435--438",

editor = "AG Cullis and JL Hutchison",

booktitle = "MICROSCOPY OF SEMICONDUCTING MATERIALS 2001",

publisher = "IOP Publishing",

address = "United Kingdom",

note = "Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials ; Conference date: 25-03-2001 Through 29-03-2001",

}

TY - GEN

T1 - Very low energy electron microscopy of doped semiconductors

AU - El-Gomati, M M

AU - Wells, T C R

AU - Jayakody, H

PY - 2001

Y1 - 2001

N2 - Very low energy electron microscopy in the range 1-5,000 eV has been used to image doped silicon regions in silicon. The contrast between the n-type and doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) appears at electron energies of similar to 3 keV. The n(+) region is brightest followed by the p(+) then the n-type substrate. The highest contrast between the different regions is achieved below 500 eV. Analysis by Auger spectroscopy revealed a surface layer of graphitic carbon. The contrast mechanism is explained in terms of metal-semiconductor contacts.

AB - Very low energy electron microscopy in the range 1-5,000 eV has been used to image doped silicon regions in silicon. The contrast between the n-type and doped regions of n(+) (As, 2.5x10(20) cm(-3)) and p(+) (B, 8x10(19) cm(-3)) appears at electron energies of similar to 3 keV. The n(+) region is brightest followed by the p(+) then the n-type substrate. The highest contrast between the different regions is achieved below 500 eV. Analysis by Auger spectroscopy revealed a surface layer of graphitic carbon. The contrast mechanism is explained in terms of metal-semiconductor contacts.

M3 - Conference contribution

SN - 0-7503-0818-4

SP - 435

EP - 438

BT - MICROSCOPY OF SEMICONDUCTING MATERIALS 2001

A2 - Cullis, AG

A2 - Hutchison, JL

PB - IOP Publishing

CY - BRISTOL

T2 - Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials

Y2 - 25 March 2001 through 29 March 2001

ER -